TIC116M-S Bourns

TIC116 SERIES SILICON CONTROLLED RECTIFIERS 8 A Continuous On-State Current 80 A Surge-Current TO-220 PACKAGE (TOP VIEW) Glass Passivated Wafer K 1 400 V to 800 V Off-State Voltage A 2 Max I of 20 mA GT 3 G Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIC116D 400 TIC116M 600 Repetitive peak off-state voltage V V DRM TIC116S 700 TIC116N 800 TIC116D 400 TIC116M 600 Repetitive peak reverse voltage V V RRM TIC116S 700 TIC116N 800 Continuous on-state current at (or below) 70C case temperature (see Note 1) I 8 A T(RMS) Average on-state current (180 conduction angle) at (or below) 70C case temperature I 5 A T(AV) (see Note 2) Surge on-state current at (or below) 25C case temperature (see Note 3) I 80 A TM Peak positive gate current (pulse width 300 s) I 3 A GM Peak gate power dissipation (pulse width 300 s) P 5 W GM Average gate power dissipation (see Note 4) P 1 W G(AV) Operating case temperature range T -40 to +110 C C Storage temperature range T -40 to +125 C stg Lead temperature 1.6 mm from case for 10 seconds T 230 C L NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70C derate linearly to zero at 110C. 2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70C derate linearly to zero at 110C. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 4. This value applies for a maximum averaging time of 20 ms. APRIL 1971 - REVISED SEPTEMBER 2002 1 Specifications are subject to change without notice.TIC116 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Repetitive peak I V = rated V T = 110C 2 mA DRM D DRM C off-state current Repetitive peak I V = rated V I = 0 T = 110C 2 mA RRM R RRM G C reverse current I Gate trigger current V = 12 V R = 100 t 20 s 8 20 mA GT AA L p(g) V = 12 V R = 100 T = - 40C AA L C 2.5 t 20 s p(g) V = 12 V R = 100 AA L V Gate trigger voltage 0.8 1.5 V GT t 20 s p(g) V = 12 V R = 100 T = 110C AA L C 0.2 t 20 s p(g) V = 12 V T = - 40C AA C 100 Initiating I = 100 mA T I Holding current mA H V = 12 V AA 40 Initiating I = 100 mA T On-state V I =8A (see Note 5) 1.7 V T T voltage Critical rate of rise of dv/dt V = rated V I = 0 T = 110C 400 V/s D D G C off-state voltage NOTE 5: This parameter must be measured using pulse techniques, t = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from p the current carrying contacts, are located within 3.2 mm from the device body. thermal characteristics PARAMETER MIN TYP MAX UNIT R Junction to case thermal resistance 3 C/W JC R Junction to free air thermal resistance 62.5 C/W JA APRIL 1971 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice.