NTE5440 Silicon Controlled Rectifier (SCR) 800V, 12A, TO220 Isolated Tab Applications: Motor Control Overvoltage Crowbar Protection Capacitive Discharge Ignition Voltage Regulation Welding Equipment Capacitive Filter Soft Start (Inrush Current Control) Absolute Maximum Ratings: Repetitive Peak Voltages, V , V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V DRM RRM RMS OnState Current (Full Sine Wave, T = +95C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A C T(RMS) Average On State Current (T = +95C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A C T(AV) Non Repetitive Surge Peak On State Current (Full Cycle, T Initial = +25C), I J TSM F = 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A F = 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A 2 2 2 I t Value for Fusing (t = 10ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A s p Critical Rate of Rise of On State Current (I = 2 x I , t < 100ns, T = +125C), di/dt . . . 100A/s G GT r J Peak Gate Current (t = 20s, T = +125C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A p J GM Average Gate Power Dissipation (T = +125C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W J G(AV) Maximum Peak Reverse Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V RGM Isolation Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500V ISO rms Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.1C/W thJC Thermal Resistance, Junction toAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit GateTrigger Current I V = 12V, R = 30 25 mA GT D L GateTrigger Voltage V V = 12V, R = 30 1.5 V GT D L Voltage that will not V V = 800V, R = 3.3k, T = +125C 200 mV GD D L J Trigger any Device Holding Current I I = 500mA, Gate Open 40 mA H T Rev. 909Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Latching Current I I = 1.2 I 60 mA L G GT Rate of Rise of OffState dv/dt V = 67% V , T = +125C, Gate Open 500 V/s D DRM J Voltage that will not Trigger any Device OnState Voltage V I = 32A, t = 380s, T = +25C 1.6 V TM TM p J OffState Current I V = 800V, T = +25C 5 A DRM DRM J Reverse Current I V = 800V, T = +125C 2 mA RRM DRM J .052 (1.32) Max .408 (10.36) .190 (4.83) Max Max .108 (2.74) Isol .153 (3.89) .512 Dia Max (13.0) Max .127 (3.23) Max .503 (12.78) Min .037 (0.94) Max Cathode Gate Anode .100 (2.54)