NTE5460 and NTE546012 Silicon Controlled Rectifier (SCR) 25 Amp, TO220 Full Pack (Isolated) Features: Thyristor for Frequencies up to 400Hz LongTerm Stability of Leakage Current and Blocking Voltage Applications: Motor Control Power Converter AC Power Controller Light and Temperature Control SCR for Inrush Current Limiting in Power Supplies for AC Drive Maximum Ratings and Electrical Characteristics: Repetitive Peak OffState Voltage, V DRM NTE5460 ................................................................... 800V NTE546012 .............................................................. 1200V Non Repetitive Peak OffState Voltage, V DSM NTE5460 ................................................................... 800V NTE546012 .............................................................. 1200V Repetitive Peak Reverse Voltage, V RRM NTE5460 ................................................................... 800V NTE546012 .............................................................. 1200V Non Repetitive Peak Reverse Blocking Voltage, V RSM NTE5460 ................................................................... 800V NTE546012 .............................................................. 1200V OnState RMS Current (180 Sine Wave), I T(AV) T = +85C, Note 1 ........................................................... 16A C T = +25C, Note 2 .......................................................... 2.5A A Peak Non Repetitive Surge Current (V = 0V), I R TSM T = +45C VJ t = 10ms (50Hz), Sine ..................................................... 300A t = 8.3ms (60Hz), Sine .................................................... 320A T = +150C VJ t = 10ms (50Hz), Sine ..................................................... 260A t = 8.3ms (60Hz), Sine .................................................... 280A Note 1. Mounted on a heatsink. Note 2. Without a heatsink.Maximum Ratings and Electrical Characteristics (Contd): 2 Circuit Fusing, I t T = +45C VJ 2 t = 10ms (50Hz), Sine ................................................... 450A s 2 t = 8.3ms (60Hz), Sine .................................................. 430A s T = +150C VJ 2 t = 10ms (50Hz), Sine ................................................... 340A s 2 t = 8.3ms (60Hz), Sine .................................................. 330A s Critical Rate of Rise of OffState Current, di/dt T = +150C, f = 50Hz, t = 200s, V = 2/3 V , I = 0.08A, di /dt = 0.08A/s VJ p D DRM G G Repetitive, I = 20A .................................................... 150A/ s T NonRepetitive, I = I .............................................. 500A/ s T T(AV) Critical Rate of Rise of OffState Voltage, dv/dt T = +150C, V = 2/3 V , R = , Method 1 (Linear Voltage Rise) ......... 500V/ s VJ DR DRM GK Peak Gate Power (T = +150C, I = I ), P VJ T T(AV) GM t = 30s ................................................................... 10W p t = 300s ................................................................... 5W p Average Gate Power, P ........................................................ 0.5W G(AV) Peak Gate Current (T = +70C, Pulse Width = 10 s), I ............................... 2A C GM Maximum Peak Forward and Reverse Blocking Current, I , I R D T = +150C, V = V , V = V ......................................... 4mA VJ R RRM D DRM Maximum Forward ON Voltage (I = 30A, T = +25C), V ............................ 1.4V T VJ T Maximum DC Gate Trigger Voltage (V = 6V), V D GT T = +25C ................................................................ 2.5V VJ T = 40C ................................................................. .5V VJ Maximum DC Gate Trigger Current (V = 6V), I D GT T = +25C ............................................................... 30mA VJ T = 40C ............................................................... .50mA VJ Maximum Gate Non Trigger Voltage (T = +150C, V = 2/3 V ), V ................ 0.2V VJ D DRM GD Maximum Gate Non Trigger Current (T = +150C, V = 2/3 V ), I ................ 1mA VJ D DRM GD Maximum Latching Current (T = +25C, t = 10s, I = 0.08A, di /dt = 0.08A/s), I .... 100mA VJ p G G L Maximum Holding Current (T = +25C, V = 6V, R = ), I ........................ 80mA VJ D GK H Maximum TurnOn Time (T = +25C, V = 1/2 V , I = 0.08A, di /dt = 0.08A/s), t ... 2 s VJ D DRM G G gd Operating Junction Temperature Range, T ................................. 40 to +150C VJ Maximum Junction Temperature, T ............................................. +150 C VJM Storage Temperature Range, T .......................................... 40 to +125C stg Maximum Thermal Resistance, Junction toCase, R ............................. 2.5K/W thJC Typical Thermal Resistance, Case toSink, R ................................... 0.5K/W thCS Maximum Thermal Resistance, Junction toAmbient, R .......................... 50K/W thJA