NTE5461 thru NTE5468 Silicon Controlled Rectifier (SCR) 10 Amp, TO220 Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half wave AC control applications such as motor controls, heating controls, and power supplies or wher- ever halfwave silicon gatecontrolled, solidstate devices are needed. These devices are supplied in a TO220 type package. Features Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation, and Durability Blocking Voltage to 800 Volts Absolute Maximum Ratings: Peak Repetitive Reverse Voltage Peak Repetitive OffState Voltage (Note 1), V , V RRM DRM NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Non Repetitive Peak Reverse Voltage NonRepetitive OffState Voltage, V , V RSM DSM NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125V NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V RMS Forward Current (All Conducting Angles, T = +75C), I . . . . . . . . . . . . . . . . . . . . . . 10A C T(RMS) Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, T = +80C), I . . . . . . . . . . . . . . 100A C TSM 2 2 Circuit Fusing Considerations (T = 65 to +100C, t = 1 to 8.3ms), I t . . . . . . . . . . . . . . . . . . 40A s J Forward Peak gate Power (t 10s), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W GM Forward Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2C/W thJC Note 1. V and V for all types can be applied on a continuous DC basis without incurring dam- DRM RRM age. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak Forward or Reverse Blocking I , Rated V or V T = +25C 10 A DRM DRM RRM C Current I RRM T = +100C 2 mA C Instantaneous OnState Voltage V I = 30A , Pulse Width 1ms, 1.7 2.0 V T TM (Peak) Duty Cycle 2% Gate Trigger Current (Continuous DC) I V = 12V, R = 30 8 15 mA GT D L Gate Trigger Voltage (Continuous DC) V V = 12V, R = 30 0.9 1.5 V GT D L Holding Current I Gate Open, V = 12V, I = 150mA 10 20 mA H D T Gate Controlled TurnOn Time t V = Rated V , I = 2A, I = 80mA 1.6 s gt D DRM TM GR Circuit Commutated Turn Off Time t V = V , I = 2A, Pulse Width = 50s, 25 s q D DRM TM dv/dt = 200V/s, di/dt = 10A/s, T = +75C C Critical RateofRise of OffState dv/dt V = Rated V , Exponential Rise, 100 V/s D DRM Voltage T = +100C C .420 (10.67) Max .110 (2.79) Anode .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode Gate .100 (2.54) Anode