NTE5470 thru 5476 Silicon Controlled Rectifier (SCR) 5 Amp, TO64 Description: The NTE5470 through NTE5476 are multipurpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications. Features: Uniform Low Level Noise Immune Gate Triggering Low Forward ON Voltage High Surge Current Capability Absolute Maximum Ratings: (Apply over operating temperature range unless otherwise specified) Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V , V DRM RRM NTE5470 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5471 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5472 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5473 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5474 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5475 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5476 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Forward Current RMS, I RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A T Peak Forward Surge Current (One Cycle, 60Hz, T = 40 to +100C), I . . . . . . . . . . . . . . 100A J TSM 2 2 Circuit Fusing (T = 40 to +100C, t 8.3ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A sec J Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W GM Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W G(AV) Peak Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Gate Voltage (Note 2), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V GM Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W thJC Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 in. lb. Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage. Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode.Electrical Characteristics: (T = +25C unles otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak Forward or Reverse Blocking Current I , Rated V or V , T = +25C 10 A J DRM DRM RRM I Gate Open RRM T = +100C 2 mA J Gate Trigger Current, Continuous DC I V = 7V, R = 100, 10 30 mA GT D L Note 3 T = 40C 60 mA C Gate Trigger Voltage, Continuous DC V 0.75 1.5 V V = 7V, R = 100 GT D L T = 40C 2.5 V C T = +100C 0.2 V J Forward ON Voltage v I = 15.7A, Note 4 1.4 2.0 V TM TM Holding Current I 10 30 mA V = 7V, Gate Open H D T = 40C 60 mA C TurnOn Time (t + t ) t I = 20mA, I = 5A, V = Rated V 1 s d r on G F D DRM Turn Off Time t 15 s I = 5A, I = 5A, off F R V = Rated V , D DRM T = +100C 25 s J dv/dt = 30V/s Forward Voltage Application Rate dv/dt Gate Open, T = +100C, 50 V/s J (Exponential) V = Rated V D DRM Note 3. For optimum operation, i.e. faster turn on, lower switching losses, best di/dt capability, recommended I = 200mA minimum. GT Note 4. Pulsed, 1ms Max, Duty Cycle 1%. .431 (10.98 Max Gate Cathode .855 (21.7) Max .125 (3.17) Max .453 (111.5) Anode Max 1032 UNF2A
