NTE5480 NTE

NTE5480 thru NTE5487 Silicon Controlled Rectifier (SCR) 8 Amp, TO64 Description: The NTE5480 through NTE5487 are multipurpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in volt- ages ranging from 25V to 600V. Features: Uniform Low Level Noise Immune Gate Triggering: I = 10mA Typ T = +25C GT C Low Forward ON Voltage: v = 1V Typ 5A +25C T High Surge Current Capability: I = 100A Peak TSM Shorted Emitter Construction Absolute Maximum Ratings: (T = 40 to +100C unless otherwise specified) J Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V or V DRM RRM NTE5480 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V NTE5481 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5482 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5483 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5484 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5485 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5486 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5487 (This device is discontinued) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Forward Current RMS, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A T(RMS) Peak Forward Surge Current (One Cycle, 60Hz, T = 40 to +100C, I . . . . . . . . . . . . . . . 100A J TSM 2 2 Circuit Fusing (t 8.3ms, T = 40 to +100C), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A s J Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W GM Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W G(AV) Peak Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Gate Voltage (Note 2), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V GM Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Typical Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5C/W thJC Typical Thermal Resistance, Case toAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W thJA Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage. Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak Forward or Reverse I , Rated V or V , T = +25C 10 A J DRM DRM RRM Gate Open Blocking Current I RRM T = +100C 2 mA J Gate Trigger Current (Continuous DC) I V = 7V, R = 100, 10 30 mA GT D L Note 3 T = 40C 60 mA C Gate Trigger Voltage (Continuous DC) V V = 7V, R = 100 0.75 1.5 V GT D L T = 40C 2.5 V C T = +100C 0.2 V J Forward ON Voltage v I = 15.7A, Note 4 1.4 2.0 V TM TM Holding Current I V = 7V, Gate Open 10 30 mA H D T = 40C 60 mA C TurnOn Time (t + t ) t I = 20mA, I = 5A, V = Rated V 1 s d r on G F D DRM Turn Off Time t 15 s I = 5A, I = 5A, off F R dv/dt = 30V/s T = +100C, 25 s J V = Rated V D DRM Forward Voltage Application Rate dv/dt Gate Open, T = +100C, 50 V/s J (Exponential) V = Rated V D DRM Note 3. For optimum operation, i.e. faster turnon, lower switching losses, best di/dt capability, rec- ommended I = 200mA minimum. GT Note 4. Pulsed, 1ms max., Duty Cycle 1%.