NTE5491 thru NTE5496 Silicon Controlled Rectifier (SCR) 10 Amp, TO48 Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for halfwave AC control applications such as motor controls, heating controls, power supplies, or wherever halfwave silicon gate controlled, solid state devices are needed. Features: GlassPassivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability Blocking Voltage to 600 Volts Absolute Maximum Ratings: (T = +125C unless otherwise specified) J Peak Repetitive OffState Blocking Voltage, V , V RRM DRM NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Peak Non Repetitive Reverse Voltage, V RSM NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 720V RMS OnState Current (All Conduction Angles), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A T(RMS) Average On State Current (T = +65C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A C T(AV) Peak Non Repetitive Surge Current, I TSM (One cycle, 60Hz, Preceeded and followed by rated Current and Voltage) . . . . . . . . . . 150A 2 2 Circuit Fusing Considerations (T = 40 to +125C, t = 1 to 8.3ms), I t . . . . . . . . . . . . . . . . . . 93A s J Peak Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W GM Average Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Peak Forward Gate Current, I GT NTE5491, NTE5492, NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Typical Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2C/W thJC Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 in.lb.Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Average Forward Blocking Current I Rated V , Gate Open D(AV) DRM NTE5491 T = +125C 6.5 mA J NTE5492 6.0 mA NTE5494 4.0 mA NTE5496 2.5 mA Average Reverse Blocking Current I Rated V , Gate Open R(AV) RRM NTE5491 T = +125C 6.5 mA J NTE5492 6.0 mA NTE5494 4.0 mA NTE5496 2.5 mA Peak Forward Blocking Current I Rated V , Gate Open 10 A DRM DRM Peak Reverse Blocking Current I Rated V , Gate Open, 20 mA RRM RRM T = +125C J Peak OnState Voltage V I = 50.3A Peak, Note 1 2 V TM TM DC GateTrigger Current I V = 12VDC, R = 50 40 mA GT AK L DC GateTrigger Voltage V V = 12VDC, R = 50 0.65 2.0 V GT AK L Gate NonTrigger Voltage V Rated V , R = 50, T = +125C 0.25 V GD DRM L J DC Holding Current I V = 12V, Gate Open 7.3 50 mA H AK Critical RateofRise of OffState dv/dt Rated V , Exponential Waveform, 30 V/s DRM Voltage T = +125C, Gate Open C Note 1. Pulse Test: Pulse Width 1ms, Duty Cycle 2%. .562 (14.28) Max Gate Cathode 1.193 (30.33) Max .200 (5.08) Max .453 (11.5) Anode Max 1/428 UNF2A