NTE54 (NPN) & NTE55 (PNP) Silicon Complementary Transistors High Frequency Driver for Audio Amplifier Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications. Features: DC Current Gain Specified to 4A: h = 40 Min I = 3A FE C = 20 MIn I = 4A C CollectorEmitter Sustaining Voltage: V = 150V Min CEO(sus) High Current GainBandwidth Product: f = 30MHz Min I = 500mA T C Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB) Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04W/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.5C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +62.5C/W thJA Note 1. Matched complementary pairs are available upon request (NTE55MCP). Matched comple- mentary pairs have their gain specification (h ) matched to within 10% of each other. FEElectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 10mA, I = 0, Note 2 150 V CE(sus) C B Collector Cutoff Current I V = 150V, I = 0 0.1 mA CEO CE B I V = 150V, I = 0 10 A CBO CE E Emitter Cutoff Current I V = 150V, I = 0 10 A EBO CE C ON Characteristics (Note 2) DC Current Gain h V = 2V, I = 0.1A 40 FE CE C V = 2V, I = 2A 40 CE C V = 2V, I = 0.1A 40 CE C V = 2V, I = 0.1A 20 CE C DC Current Gain Linearity h V from 2V to 20V, 2 FE CE I from 0.1A to 3A C NPN to PNP 3 CollectorEmitter Saturation Voltage V I = 1A, I = 0.1A 0.5 V CE(sat) C B BaseEmitter ON Voltage V V = 2V, I = 1A 1 V BE(on) CE C Dynamic Characteristics Current GainBandwidth Product f V = 10V, I = 500mA, 30 MHz t CE C f = 10MHz, Note 3 test Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 3. f = h f T fe test .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab