NTE5442 thru NTE5448 Silicon Controlled Rectifier (SCR) 8 Amp, TO127 Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCRs) in a TO127 type package de- signed for high volume consumer phase control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltage regula- tors, vending machines, and lamp drivers. Features: Small, Rugged Construction Practical Level Triggering and Holding Characteristics +25C: I = 7mA Typ GT I = 6mA Typ Hold Low ON Voltage: V = 1V Typ 5A +25C TM High Surge Current Rating: I = 80A TSM Absolute Maximum Ratings: (Note 1, T = +100C unless otherwise specified) J Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), V or V DRM RRM NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Non Repetitive Peak Reverse Blocking Voltage (t = 5ms (max) duration), V RSM NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V RMS OnState Current (All Conduction Angles), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A T(RMS) Average On State Current (T = +73C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A C T(AV) Peak Non Repetitive Surge Current, I TSM (1/2 cycle, 60Hz preceeded and followed by rated current and voltage) . . . . . . . . . . . . . . 80A 2 2 Circuit Fusing (T = 40 to +100C, t = 1ms to 8.3ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A sec J Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W GM Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Peak Forward Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Reverse Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V RGM Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Maximum Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W thJC Typical Thermal Resistance, Junction toAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W thJA Note 1. NTE5446 is a discontinued device and is replaced by NTE5448. Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied concurrently with a negative potential on the anode. When checking forward or reverse blocking capability, thyristor devices should not be tested with a constant current source in a manner that the voltage applied exceeds the rated blocking voltage.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak Forward or Reverse I , Rated V or V , T = +25C 10 A DRM DRM RRM J Blocking Current I Gate Open RRM T = +100C 2 mA J I T = +25C 7 30 mA Gate Trigger Current V = 7V, R = 100 GT D L C (Continuous DC) T = 40C 60 mA C Gate Trigger Voltage V V = 7V, R = 100 T = +25C 0.75 1.5 V GT D L C (Continuous DC) T = 40C 2.5 V C V = Rated V , R = 100, T = +100C 0.2 V D DRM L J Peak OnState Voltage V Pulse Width = 1ms to 2 ms, I = 5A 1.0 1.5 V TM TM peak Duty Cycle 2% I = 15.7A 2.0 V TM peak Holding Current I V = 7V, Gate Open T = +25C 6 40 mA Hold D C T = 40C 70 mA C Gate Controlled TurnOn Time t I = 5A, I = 20mA, V = Rated V 1 s gt TM GT D DRM t I = 5A, I = 5A 15 s Circuit Commutated TurnOff q TM R Time T = +100C 20 s J Critical RateofRise of dv/dt V = Rated V , Exponential Waveform, 50 V/s D DRM OffState Voltage T = +100C, Gate Open J .530 (13.4) Max .143 (3.65) Dia Thru .668 (17.0) Max KG .655 (16.6) Max .166 (4.23) A (Heat Sink Area) Heat Sink Contact .150 (3.82) Max Area (Bottom)
