NTE5437 & NTE5438 Silicon Controlled Rectifier (SCR) 8 Amp Senstitive Gate, TO220 Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Repetitive Peak OffState Voltage (T = 40 to +125C, R = 1k), V , V J GK DRM RRM NTE5437 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5438 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V OnState Current (All Conducting Angles, T = +85C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A C T(RMS) Average OnState Current (Half Cycle, = 180, T = +85C), I . . . . . . . . . . . . . . . . . . . . 5.1A C T(AV) Non Repetitive OnState Current, I TSM Half Cycle, 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88A Half Cycle, 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A 2 2 Fusing Current (t= 10ms, Half Cycle), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A s Peak Reverse Gate Voltage (I = 50A), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V GR GRM Peak Gate Current (10s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Gate Dissipation (10s Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W GM Gate Dissipation (20ms Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W G(AV) Oprating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Lead Temperature (During Soldering, 1.6mm from case, 10sec Max), T . . . . . . . . . . . . . . . +250C L Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4K/W thJC Thermal Resistance, Junction toAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Max Unit OffState Leakage Current I , I T = +125C 0.5 mA V + V = Rated Voltage, DRM RRM DRM RRM J R = 1k GK T = +25C 5.0 A JElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Max Unit OnState Voltage V I = 16A, T = +25C 1.95 V T T J OnState Threshold Voltage V T = +125C 1.05 V T(TO) J OnState Slope Resistance r T = +125C 65 m T J Gate Trigger Current I V = 7V 200 A GT D Gate Trigger Voltage V V = 7V 2.0 V GT D Holding Current I R = 1k 10 mA H GK Latching Current I R = 1k 20 mA L GK Critical Rate of Voltage Rise dv/dt V = .67 x V , R = 1k, T = +125C 5 V/s D DRM GK J Critical Rate of Current Rise di/dt I = 10mA, di /dt = 0.1A/s, T = +125C 100 A/s G G J Gate Controlled Delay Time t I = 10mA, di /dt = 0.1A/s 500 ns gd G G Commutated Turn Off Time t T = +85C, V = .67 x V , V = 35V, I = 5.1A 100 s q C D DRM R T .420 (10.67) Max .110 (2.79) Anode .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode Gate .100 (2.54) Anode