TMM6263FILM STMicroelectronics

TMM 6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break- down, low turn-on voltage and ultrafast switching. MINIMELF Primarly intended for high level UHF/VHF detection (Glass) and pulse application with broad dynamic range. ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive Peak Reverse Voltage 60 V RRM I Forward Continuous Current 15 mA F Ti = 25 C I Surge non Repetitive Forward Current t 1s 50 mA FSM p T Storage and Junction Temperature Range - 65 to 200 C stg T -65 to 200 j T Maximum Temperature for Soldering during 15s 260 C L THERMAL RESISTANCE Symbol Test Conditions Value Unit R Junction-leads 400 th(j-l) C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit V 60 V BR T = 25CI = 10A amb R V * T = 25CI = 1mA 0.41 V F amb F T = 25C I = 15mA 1 amb F I * T = 25CV = 50V 0.2 A R amb R DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit C T = 25CV = 0V f = 1MHz 2.2 pF amb R T = 25CI = 5mA Krakauer Method 100 ps amb F * Pulse test: tp 300s < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. August 1999 Ed: 1A 1/3TMM 6263 Figure 1. Forward current versus forward Figure 2. Capacitance C versus reverse voltage (typical values). applied voltage V (typical values). R Figure 3. Reverse current versus ambient Figure 4. Reverse current versus continuous temperature. reverse voltage (typical values). 2/3