TMMBAT46FILM STMicroelectronics

TMMBAT 46 SMALL SIGNAL SCHOTTKY DIODE MINIMELF (Glass) DESCRIPTION General purpose, metal to silicon diode featuring high breakdown voltage low turn-on voltage. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive Peak Reverse Voltage 100 V RRM I Forward Continuous Current T = 25 C 150 mA F l t 1s 350 mA p IFRM Repetitive Peak Fordware Current 0.5 I Surge non Repetitive Forward Current t = 10ms 750 mA FSM p 150 mW Ptot Power Dissipation T = 80 C l Tstg Storage and Junction Temperature Range - 65 to + 150 C T - 65 to + 125 C j T Maximum Temperature for Soldering during 15s 260 C L THERMAL RESISTANCE Symbol Test Conditions Value Unit R Junction-leads 300 C/W th(j-l) August 1999 Ed: 1A 1/4TMMBAT 46 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit V T = 25CI = 100 A 100 V BR j R V * T = 25 C I = 0.1mA 0.25 V F F j I = 10mA 0.45 Tj = 25C F T = 25 C I = 250mA 1 F j I * T = 25 C V = 1.5V 0.5 A R R j 5 T = 60C j V = 10V 0.8 T = 25C R j 7.5 T = 60C j V = 50V 2 T = 25C R j 15 T = 60C j V = 75V 5 T = 25C j R 20 T = 60C j DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit C T = 25CV = 0V f = 1MHz 10 pF j R T = 25CV = 1V 6 j R * Pulse test: tp 300s < 2%. Figure 1. Forward current versus forward Figure 2. Forward current versus forward voltage at different temperatures (typical voltage (typical values). values). 2/4