Product Information

TMBAT49FILM

TMBAT49FILM electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers 500mA 80 Volt
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2704 ea
Line Total: USD 1.35

1778 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1778 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 5
Multiples : 1

Stock Image

TMBAT49FILM
STMicroelectronics

5 : USD 0.2704
25 : USD 0.2275
93 : USD 0.1768
254 : USD 0.1664

4990 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 37
Multiples : 1

Stock Image

TMBAT49FILM
STMicroelectronics

37 : USD 1.0583
74 : USD 0.517
100 : USD 0.4726
200 : USD 0.4711
500 : USD 0.3823
1000 : USD 0.3711

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Termination Style
Type
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

TMBAT49 Small signal Schottky diode Features very low turn-on voltage fast switching Description The TMBAT49 is a general purpose metal to silicon diode. This device has integrated MELF protection against excessive voltage such as (glass) electrostatic discharges. November 2010 Doc ID 3484 Rev 2 1/6 www.st.com 6Characteristics TMBAT49 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 80 V RRM I Forward continuous current T = 70 C 500 mA F j t = 1 s p I Repetitive peak forward current 3A FRM 0.5 I Surge non repetitive forward current t = 10 ms 10 A FSM p T Storage temperature range - 65 to +150 C stg T Operating junction temperature range - 65 to +125 C j T Maximum lead soldering temperature during 15 s 260 C L Table 2. Thermal parameter Symbol Parameter Value Unit R Junction to lead 110 C/W th(j-l) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit (1) I Reverse leakage current T = 25 C V = 80 V - - 200 A R j R I = 10 mA - - 0.32 F (1) V Forward voltage drop T = 25 C I = 100 mA - - 0.42 V F j F I = 1 A - - 1 F 1. Pulse test: t 300 s, < 2% p Table 4. Dynamic characteristics (T = 25 C) j Symbol Parameter Test conditions Min. Typ. Max. Unit V = 0 V - 120 - R C Diode capacitance F = 1 MHz pF V = 5 V - 35 - R 2/6 Doc ID 3484 Rev 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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