MBRS3100T3G, NRVBS3100T3G Schottky Power Rectifier, Surface Mount, 3.0 A, 100 V, SMC Package www.onsemi.com This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features SCHOTTKY BARRIER epitaxial construction with oxide passivation and metal overlay RECTIFIERS contact. Ideally suited for low voltage, high frequency rectification, or 3.0 AMPERES, 100 VOLTS as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features Small Compact Surface Mountable Package with JBend Leads SMC 2LEAD Rectangular Package for Automated Handling CASE 403AC Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients MARKING DIAGRAM GuardRing for Stress Protection NRVB Prefix for Automotive and Other Applications Requiring AYWW Unique Site and Control Change Requirements AECQ101 B310 Qualified and PPAP Capable* These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant B310 = Specific Device Code A = Assembly Location** Mechanical Characteristics Y = Year Case: Epoxy, Molded WW = Work Week = PbFree Package Weight: 217 mg (Approximately) (Note: Microdot may be in either location) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ** The Assembly Location code (A) is front side optional. In cases where the Assembly Location is Lead and Mounting Surface Temperature for Soldering Purposes: stamped in the package, the front side assembly 260C Max. for 10 Seconds code may be blank. Polarity: Polarity Band on Plastic Body Indicates Cathode Lead ESD Ratings: ORDERING INFORMATION Machine Model = C Device Package Shipping Human Body Model = 3B MBRS3100T3G SMC 2Lead 2,500 / (PbFree) Tape & Reel NRVBS3100T3G* SMC 2Lead 2,500 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: August, 2017 Rev.7 MBRS3100T3/DMBRS3100T3G, NRVBS3100T3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (At Rated V , T = 100C) 3.0 R L Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 130 Operating Junction Temperature Range (Note 1) T 65 to +175 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead R 11 C/W JL ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) V V F (i = 3.0 A, T = 25C) 0.79 F J (i = 6.0 A, T = 25C) 0.90 F J (i = 3.0 A, T = 125C) 0.62 F J (i = 6.0 A, T = 125C) 0.70 F J Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 25C) 0.05 J (Rated dc Voltage, T = 125C) 5.0 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2