Surface Mount Schottky Power Rectifier MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G www.onsemi.com This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay SCHOTTKY BARRIER contact. Ideally suited for low voltage, high frequency rectification, or RECTIFIER as free wheeling and polarity protection diodes in surface mount 3.0 AMPERE applications where compact size and weight are critical to the system. 200 VOLTS Features Small Compact Surface Mountable Package with JBend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction SMB Very High Blocking Voltage 200 V CASE 403A 175C Operating Junction Temperature GuardRing for Stress Protection MARKING DIAGRAM NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AECQ101 AYWW Qualified and PPAP Capable* B320 These are PbFree Devices Mechanical Charactersistics B320 = Specific Device Code Case: Epoxy, Molded, Epoxy Meets UL 94, V0 A = Assembly Location** Y = Year Weight: 95 mg (approximately) WW = Work Week Finish: All External Surfaces Corrosion Resistant and Terminal = PbFree Package Leads are Readily Solderable (Note: Microdot may be in either location) Lead and Mounting Surface Temperature for Soldering Purposes: **The Assembly Location code (A) is front side 260C Max. for 10 Seconds optional. In cases where the Assembly Location is Cathode Polarity Band stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. Device Meets MSL 1 Requirements ESD Ratings: Machine Model = A ORDERING INFORMATION Human Body Model = 1C Device Package Shipping MBRS3200T3G SMB 2,500 / (PbFree) Tape & Reel NRVBS3200T3G* SMB 2,500 / (PbFree) Tape & Reel SMB 2,500 / NRVBS3200NT3G* (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2019 Rev. 8 MBRS3200T3/DMBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 200 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (T = 150 C) I 3.0 A L F(AV) NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 100 Operating Junction Temperature T 65 to +175 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 1) R 13 C/W JL Thermal Resistance, JunctiontoAmbient (Note 2) R 62 JA ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) V V F (I = 3.0 A, T = 25C) 0.84 F J (I = 4.0 A, T = 25C) 0.86 F J (I = 3.0 A, T = 150C) 0.59 F J Maximum Instantaneous Reverse Current (Note 3) I R (Rated dc Voltage, T = 25C) 1.0 mA J (Rated dc Voltage, T = 150C) 5.0 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Minimum pad size (0.108 0.085 inch) for each lead on FR4 board. 2. 1 inch square pad size (1 0.5 inch) for each lead on FR4 board. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 100 100 T = 100C T = 150C T = 100C A A A T = 150C A T = 175C A T = 175C A T = 25C T = 25C A A 10 10 1 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 V , FORWARD VOLTAGE (V) V , FORWARD VOLTAGE (V) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 I , FORWARD CURRENT (A) F I , FORWARD CURRENT (A) F