X-On Electronics has gained recognition as a prominent supplier of NRVBS3200T3G-VF01 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. NRVBS3200T3G-VF01 Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

NRVBS3200T3G-VF01 ON Semiconductor

NRVBS3200T3G-VF01 electronic component of ON Semiconductor
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See Product Specifications
Part No.NRVBS3200T3G-VF01
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 3A 200V SCHOTTKY
Datasheet: NRVBS3200T3G-VF01 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.502
10 : USD 0.4771
25 : USD 0.4675
N/A

Obsolete
0

Multiples : 10000
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.6015
10 : USD 0.7236
100 : USD 0.4506
500 : USD 0.4069
1000 : USD 0.367
2500 : USD 0.3452
5000 : USD 0.3422
N/A

Obsolete
0
MOQ : 19
Multiples : 1
19 : USD 0.4004
25 : USD 0.3796
50 : USD 0.3721
100 : USD 0.3721
250 : USD 0.3721
N/A

Obsolete
0
MOQ : 19
Multiples : 19
19 : USD 0.4969
25 : USD 0.4675
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Collector- Base Voltage Vcbo
Collector- Emitter Voltage Vceo Max
Dc Current Gain Hfe Max
Emitter- Base Voltage Vebo
Brand
Collector-Emitter Saturation Voltage
Continuous Collector Current
Transistor Polarity
Gain Bandwidth Product Ft
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We are delighted to provide the NRVBS3200T3G-VF01 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NRVBS3200T3G-VF01 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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Surface Mount Schottky Power Rectifier MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G www.onsemi.com This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay SCHOTTKY BARRIER contact. Ideally suited for low voltage, high frequency rectification, or RECTIFIER as free wheeling and polarity protection diodes in surface mount 3.0 AMPERE applications where compact size and weight are critical to the system. 200 VOLTS Features Small Compact Surface Mountable Package with JBend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction SMB Very High Blocking Voltage 200 V CASE 403A 175C Operating Junction Temperature GuardRing for Stress Protection MARKING DIAGRAM NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AECQ101 AYWW Qualified and PPAP Capable* B320 These are PbFree Devices Mechanical Charactersistics B320 = Specific Device Code Case: Epoxy, Molded, Epoxy Meets UL 94, V0 A = Assembly Location** Y = Year Weight: 95 mg (approximately) WW = Work Week Finish: All External Surfaces Corrosion Resistant and Terminal = PbFree Package Leads are Readily Solderable (Note: Microdot may be in either location) Lead and Mounting Surface Temperature for Soldering Purposes: **The Assembly Location code (A) is front side 260C Max. for 10 Seconds optional. In cases where the Assembly Location is Cathode Polarity Band stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. Device Meets MSL 1 Requirements ESD Ratings: Machine Model = A ORDERING INFORMATION Human Body Model = 1C Device Package Shipping MBRS3200T3G SMB 2,500 / (PbFree) Tape & Reel NRVBS3200T3G* SMB 2,500 / (PbFree) Tape & Reel SMB 2,500 / NRVBS3200NT3G* (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2019 Rev. 8 MBRS3200T3/DMBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 200 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (T = 150 C) I 3.0 A L F(AV) NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 100 Operating Junction Temperature T 65 to +175 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 1) R 13 C/W JL Thermal Resistance, JunctiontoAmbient (Note 2) R 62 JA ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) V V F (I = 3.0 A, T = 25C) 0.84 F J (I = 4.0 A, T = 25C) 0.86 F J (I = 3.0 A, T = 150C) 0.59 F J Maximum Instantaneous Reverse Current (Note 3) I R (Rated dc Voltage, T = 25C) 1.0 mA J (Rated dc Voltage, T = 150C) 5.0 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Minimum pad size (0.108 0.085 inch) for each lead on FR4 board. 2. 1 inch square pad size (1 0.5 inch) for each lead on FR4 board. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 100 100 T = 100C T = 150C T = 100C A A A T = 150C A T = 175C A T = 175C A T = 25C T = 25C A A 10 10 1 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 V , FORWARD VOLTAGE (V) V , FORWARD VOLTAGE (V) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 I , FORWARD CURRENT (A) F I , FORWARD CURRENT (A) F

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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