X-On Electronics has gained recognition as a prominent supplier of NRVTS1045EMFST1G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. NRVTS1045EMFST1G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

NRVTS1045EMFST1G ON Semiconductor

NRVTS1045EMFST1G electronic component of ON Semiconductor
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Part No.NRVTS1045EMFST1G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: ON Semiconductor Schottky Diodes & Rectifiers 45V 10A TRENCH RECTIFIER
Datasheet: NRVTS1045EMFST1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.6871 ea
Line Total: USD 68.71 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8658
10 : USD 0.6458
25 : USD 0.6393
50 : USD 0.6311
100 : USD 0.54
250 : USD 0.5346
500 : USD 0.4623
1000 : USD 0.3666

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 100
Multiples : 1
100 : USD 0.6871
500 : USD 0.4707
1500 : USD 0.403
4500 : USD 0.3957
12000 : USD 0.3875
22500 : USD 0.3795

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.3938

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 2.4041
10 : USD 0.8893
100 : USD 0.6539
500 : USD 0.5171
1000 : USD 0.4146
1500 : USD 0.3739

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0906
5 : USD 0.7896
25 : USD 0.7112
31 : USD 0.532
83 : USD 0.504

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1000
Multiples : 1
1000 : USD 0.3666

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Brand
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NRVTS1045EMFST1G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NRVTS1045EMFST1G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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NTS1045EMFS, NRVTS1045EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier NTS1045EMFS, NRVTS1045EMFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 45 R Average Rectified Forward Current I 10 A F(AV) (Rated V , T = 166C) R C Peak Repetitive Forward Current, I 20 A FRM (Rated V , Square Wave, 20 kHz, T = 162C) R C NonRepetitive Peak Surge Current I 210 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +150 C stg Operating Junction Temperature T 55 to +150 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 100 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.0 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 5.0 Amps, T = 25C) 0.42 F J (i = 10 Amps, T = 25C) 0.48 0.60 F J (i = 5.0 Amps, T = 125C) 0.34 F J (i = 10 Amps, T = 125C) 0.41 0.53 F J Reverse Current (Note 1) i R (Rated dc Voltage, T = 25C) 20 50 A J (Rated dc Voltage, T = 125C) 7.0 20 mA J Diode Capacitance C pF d (Rated dc Voltage, T = 25C, f = 1 MHz) 300 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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