NSR1020MW2 20V SOD-323 Schottky Barrier Diode This Schottky Barrier Diode in the SOD323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The www.onsemi.com resulting device is ideally suited for application as a blocking diode in charging applications or as part of discrete buck converter or discrete boost converter. As part of a buck conversion circuit, a boost conversion circuit or a charging circuit the low Vf drop of the Schottky HIGH CURRENT improves the efficiency of the overall device by consuming less power SCHOTTKY BARRIER DIODE in the forward mode. Features 1 2 Low Forward Voltage 0.24 Volts (Typ) I = 10 mAdc F CATHODE ANODE High Current Capability ESD Rating Human Body Model: CLASS 3B Machine Model: C 2 MARKING NSVR Prefix for Automotive and Other Applications Requiring DIAGRAM Unique Site and Control Change Requirements AECQ101 1 Qualified and PPAP Capable RE M SOD323 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 477 Compliant STYLE 1 MAXIMUM RATINGS (T = 125C unless otherwise noted) J RE = Specific Device Code M = Date Code Rating Symbol Value Unit = PbFree Package Reverse Voltage V 20 Vdc (Note: Microdot may be in either location) R Peak Revese Voltage V 30 V RM Forward Power Dissipation P F ORDERING INFORMATION T = 25C 200 mW A Derate above 25C 2.0 mW/C Device Package Shipping Forward Current (DC) I A F NSR1020MW2T1G SOD323 3000 / Tape & Continuous 1 (PbFree) Reel Forward Current I A F NSR1020MW2T3G SOD323 10,000 / Tape & t = 8.3 ms Half Sinewave 5 (PbFree) Reel Repetitive Forward Current I A FRM NSVR1020MW2T1G SOD323 3000 / Tape & period = 1.5 s, Duty Cycle = 66.7% 2 (PbFree) Reel Junction Temperature T 125 Max C J For information on tape and reel specifications, Storage Temperature Range T 55 to +150 C including part orientation and tape sizes, please stg refer to our Tape and Reel Packaging Specification Stresses exceeding those listed in the Maximum Ratings table may damage the Brochure, BRD8011/D. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 Publication Order Number: March, 2016 Rev. 3 NSR1020MW2/D MNSR1020MW2 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Total Capacitance (V = 5.0 V, f = 1.0 MHz) C 25 29 pF R T Reverse Leakage (V = 15 V) I 40 Adc R R Forward Voltage (I = 1 mAdc) V 0.20 Vdc F F Forward Voltage (I = 10 mAdc) V 0.26 Vdc F F Forward Voltage (I = 100 mAdc) V 0.33 Vdc F F Forward Voltage (I = 500 mAdc) V 0.44 Vdc F F Forward Voltage (I = 1000 mAdc) V 0.54 Vdc F F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1000 10000 150C 125C 1000 100 150C 85C 100 10 85C 10 55C 25C 25C 45C 1 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 140 120 100 80 60 40 20 0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance www.onsemi.com 2 IF, FORWARD CURRENT (mA) CT, CAPACITANCE (pF) IR, REVERSE CURRENT ( A)