NSR10F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. www.onsemi.com Features 30 V SCHOTTKY Low Forward Voltage Drop 420 mV 1.0 A Low Reverse Current 20 A 10 V VR BARRIER DIODE 1.0 A of Continuous Forward Current ESD Rating Human Body Model: Class 3B 1 2 ESD Rating Machine Model: Class C CATHODE ANODE High Switching Speed These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 MARKING Compliant DIAGRAM Typical Applications PIN 1 1 LCD and Keypad Backlighting 10F30 DSN2 Camera Photo Flash YYY (0502) CASE 152AD Buck and Boost dcdc Converters Reverse Voltage and Current Protection 10F30 = Specific Device Code Clamping & Protection YYY = Year Code PIN 1 Markets Mobile Handsets AFM MP3 Players Digital Camera and Camcorders AF = Specific Device Code M = Month Code Notebook PCs & PDAs GPS MAXIMUM RATINGS ORDERING INFORMATION Rating Symbol Value Unit Device Package Shipping Reverse Voltage V 30 V R NSR10F30NXT5G DSN2 5000 / Tape & Reel Forward Current (DC) I 1.0 A (PbFree) F Forward Surge Current (60 Hz 1 cycle) I 18 A For information on tape and reel specifications, FSM including part orientation and tape sizes, please Repetitive Peak Forward Current I 4.0 A FRM refer to our Tape and Reel Packaging Specifications (Pulse Wave = 1 sec, Duty Cycle = 66%) Brochure, BRD8011/D. ESD Rating: Human Body Model ESD > 8 kV Machine Model > 400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: April, 2017 Rev. 3 NSR10F30/DNSR10F30NXT5G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 228 C/W JA Total Power Dissipation T = 25C P 548 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 85 C/W JA Total Power Dissipation T = 25C P 1.47 W A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 20 R (V = 30 V) 100 R Forward Voltage V V F (I = 0.5 A) 0.400 0.420 F (I = 1.0 A) 0.450 0.470 F 100,000 10 150C 10,000 T = 125C J 1 1,000 125C 100 75C T = 150C J 0.1 10 1 25C 0.01 0.1 25C 75C 0.01 25C 25C 0.001 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Forward Voltage Figure 2. Typical Reverse Current 300 T = 25C A 250 200 150 100 50 0 0 5 10 15 20 25 30 V , REVERSE VOLTAGE (V) R Figure 3. Typical Capacitance www.onsemi.com 2 I , FORWARD CURRENT (A) F C, CAPACITANCE (pF) I , REVERSE CURRENT ( A) R