NSR0520V2, NSVR0520V2 Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSR0520V2 in a SOD523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting www.onsemi.com reduced space requirements. 20 VOLT SCHOTTKY Features BARRIER DIODE Very Low Forward Voltage Drop 325 mV 100 mA Low Reverse Current 8.0 A 10 V Continuous Forward Current 500 mA Power Dissipation with Minimum Trace 170 mW 1 2 CATHODE ANODE Very High Switching Speed 12 ns 10 mA Low Capacitance 35 pF 1.0 V NSV Prefix for Automotive and Other Applications Requiring 2 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOD523 CASE 502 Compliant STYLE 1 Typical Applications LCD and Keypad Backlighting MARKING DIAGRAM Camera Photo Flash Buck and Boost dcdc Converters AA M Reverse Voltage and Current Protection 12 Clamping and Protection AA = Device Code Markets M = Date Code* Mobile Handsets = PbFree Package (Note: Microdot may be in either location) MP3 Players *Date Code orientation position may vary depending Digital Camera and Camcorders upon manufacturing location. Notebook PCs & PDAs GPS ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping Rating Symbol Value Unit NSR0520V2T1G SOD523 3000/Tape & Reel Reverse Voltage V 20 Vdc R (PbFree) Forward Continuous Current (DC) I 500 mA F NSVR0520V2T1G SOD523 3000/Tape & Reel NonRepetitive Peak Forward Surge Current I 2.0 A FSM (PbFree) Repetitive Peak Forward Current I 1.5 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) NSR0520V2T5G SOD523 8000/Tape & Reel (PbFree) ESD Rating: Human Body Model ESD Class 3B Machine Model Class C NSVR0520V2T5G SOD523 8000/Tape & Reel (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: August, 2018 Rev. 5 NSR0520V2T1/DNSR0520V2, NSVR0520V2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 600 C/W JA Total Power Dissipation T = 25C P 170 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 300 C/W JA Total Power Dissipation T = 25C P 340 mW A D Junction and Storage Temperature Range T , T 55 to +125 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick singlesided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick singlesided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 8.0 30 R (V = 20 V) 75 R Forward Voltage V mV F (I = 10 mA) 255 320 F (I = 100 mA) 325 390 F (I = 500 mA) 410 480 F Total Capacitance 35 pF CT (V = 1.0 V, f = 1 MHz) R Reverse Recovery Time t 12.0 ns rr (I = I = 10 mA, I = 1.0 mA) F R R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DC Current Source + t t r p 0.1 F 0 V 10% I F 90% 750 H V R 0.1 F Pulse Generator 50 Output Output Pulse Generator I F DUT Adjust for I RM t rr R = 50 L i = 1 mA R(REC) I RM Current Output Pulse Transformer (I = I = 10 mA measured F RM at i = 1 mA) R(REC) 50 Input Oscilloscope 1. DC Current Source is adjusted for a Forward Current (I ) of 10 mA. F 2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I of 10 mA. RM 3. Pulse Generator transition time << t . rr 4. I is measured at 1 mA. Typically 0.1 X I or 0.25 X I . R(REC) RM RM 5. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2