NSVR05F40NXT5G ON Semiconductor

NSR05F40NXT5G Schottky Barrier Diodes, DSN2 (0402) Package These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher www.onsemi.com efficiency and meeting reduced space requirements. 40 V SCHOTTKY Features BARRIER DIODE Low Forward Voltage Drop 420 mV 500 mA Low Reverse Current 15 A 10 V VR 500 mA of Continuous Forward Current 1 2 ESD Rating Human Body Model: Class 3B CATHODE ANODE ESD Rating Machine Model: Class C High Switching Speed 2 MARKING NSV Prefix for Automotive and Other Applications Requiring DIAGRAMS Unique Site and Control Change Requirements AECQ101 PIN 1 1 Qualified and PPAP Capable DSN2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 05F40 (0402) YYY Compliant CASE 152AC Typical Applications 05F40 = Specific Device Code LCD and Keypad Backlighting YYY = Year Code Camera Photo Flash PIN 1 Buck and Boost dcdc Converters ACM Reverse Voltage and Current Protection Clamping and Protection AC = Specific Device Code M = Month Code Markets Mobile Handsets MP3 Players ORDERING INFORMATION Digital Camera and Camcorders Device Package Shipping Notebook PCs & PDAs NSR05F40NXT5G DSN2 5000 / Tape & Reel GPS (PbFree) MAXIMUM RATINGS NSVR05F40NXT5G DSN2 5000 / Tape & Reel (PbFree) Rating Symbol Value Unit Reverse Voltage V 40 V For information on tape and reel specifications, R including part orientation and tape sizes, please Forward Current (DC) I 500 mA F refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Forward Surge Current I A FSM (60 Hz 1 cycle) 10 Repetitive Peak Forward Current I 4.0 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) ESD Rating: Human Body Model ESD > 8 kV Machine Model > 400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: April, 2017 Rev. 7 NSR05F40/DNSR05F40NXT5G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 240 C/W JA Total Power Dissipation T = 25C P 521 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 94 C/W JA Total Power Dissipation T = 25C P 1.3 W A D Storage Temperature Range T 40 to +125 C stg Junction Operating Temperature Range T 40 to +150 C J 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 15 R (V = 40 V) 75 R Forward Voltage V V F (I = 100 mA) 0.340 0.360 F (I = 500 mA) 0.420 0.460 F Total Capacitance C pF T (V = 1 V, f = 1 MHz) 70 80 R (V = 10 V, f = 1 MHz) 27 35 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2