NST3904DP6T5G Dual General Purpose Transistor The NST3904DP6T5G device is a spin off of our popular SOT23/SOT323/SOT563 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 sixleaded surface mount package. By putting two discrete devices in www.onsemi.com one package, this device is ideal for lowpower surface mount applications where board space is at a premium. Features (3) (2) (1) h , 100300 FE Low V , 0.4 V CE(sat) Q Q 1 2 Reduces Board Space and Component Count NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 (4) (5) (6) Qualified and PPAP Capable NST3904DP6T5G These Devices are PbFree, Halogen Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 40 Vdc CEO Collector Base Voltage V 60 Vdc CBO Emitter Base Voltage V 6.0 Vdc EBO SOT963 Collector Current Continuous I 200 mAdc C CASE 527AD Electrostatic Discharge HBM ESD 2 MM Class B MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic (Single Heated) Symbol Max Unit Total Device Dissipation T = 25C P 240 mW A D E M Derate above 25C (Note 1) 1.9 mW/C 1 Thermal Resistance, Junction-to-Ambient 520 C/W R JA (Note 1) E = Device Code Total Device Dissipation T = 25C P 280 mW M = Date Code A D Derate above 25C (Note 2) 2.2 mW/C Thermal Resistance, Junction-to-Ambient R 446 C/W JA (Note 2) ORDERING INFORMATION Characteristic (Dual Heated) (Note 3) Symbol Max Unit Device Package Shipping Total Device Dissipation T = 25C P 350 mW A D Derate above 25C (Note 1) 2.8 mW/C NST3904DP6T5G SOT963 8000/Tape & Reel (PbFree) Thermal Resistance, Junction-to-Ambient R 357 C/W JA (Note 1) NSVT3904DP6T5G SOT963 8000/Tape & Reel Total Device Dissipation T = 25C P 420 mW A D (PbFree) Derate above 25C (Note 2) 3.4 mW/C For information on tape and reel specifications, Thermal Resistance, Junction-to-Ambient R 297 C/W JA including part orientation and tape sizes, please (Note 2) refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Junction and Storage Temperature Range T , T 55 to C J stg +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. FR4 100 mm , 1 oz. copper traces, still air. 2 2. FR4 500 mm , 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2017 Rev. 2 NST3904DP6/DNST3904DP6T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 4) (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 10 Adc, I = 0) V 60 Vdc C E (BR)CBO Emitter Base Breakdown Voltage (I = 10 Adc, I = 0) V 6.0 Vdc E C (BR)EBO Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB CEX ON CHARACTERISTICS (Note 4) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) f 200 MHz C CE T Output Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 4.0 pF CB E obo Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF EB C ibo Noise Figure (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) NF 5.0 dB CE C S SWITCHING CHARACTERISTICS Delay Time (V = 3.0 Vdc, V = 0.5 Vdc) t 35 CC BE d ns Rise Time (I = 10 mAdc, I = 1.0 mAdc) t 35 C B1 r Storage Time (V = 3.0 Vdc, I = 10 mAdc) t 275 CC C s ns Fall Time (I = I = 1.0 mAdc) t 50 B1 B2 f 4. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. 0.28 400 I /I = 10 C B 150C (5.0 V) 350 V = 150C CE(sat) 0.23 150C (1.0 V) 300 250 0.18 25C (5.0 V) 200 25C (1.0 V) 55C 25C 0.13 150 55C (5.0 V) 55C (1.0 V) 100 0.08 50 0 0.03 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 1. Collector Emitter Saturation Voltage vs. Figure 2. DC Current Gain vs. Collector Current Collector Current www.onsemi.com 2 V , COLLECTOREMITTER CE(sat) SATURATION VOLTAGE (V) h , DC CURRENT GAIN (V) FE