X-On Electronics has gained recognition as a prominent supplier of NSVR0340HT1G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. NSVR0340HT1G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

NSVR0340HT1G ON Semiconductor

NSVR0340HT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NSVR0340HT1G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: ON Semiconductor Schottky Diodes & Rectifiers SOD323 SCHTY BARRIER DIODE
Datasheet: NSVR0340HT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.231 ea
Line Total: USD 0.23 
Availability - 196350
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
196350
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.231
10 : USD 0.1485
100 : USD 0.0891
1000 : USD 0.0803
3000 : USD 0.066
9000 : USD 0.0605
99000 : USD 0.0594

75660
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 5781
Multiples : 1
5781 : USD 0.0844

2128
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 105
Multiples : 1
105 : USD 0.0892

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSVR0340HT1G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVR0340HT1G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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NSR0340HT1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSR0340H in a SOD323 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting NSR0340HT1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 740 C/W JA Total Power Dissipation T = 25C P 160 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 460 C/W JA Total Power Dissipation T = 25C P 270 mW A D Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick singlesided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick singlesided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 0.2 1.0 R (V = 25 V) 0.4 3.0 R (V = 40 V) 1.3 6.0 R Forward Voltage V mV F (I = 10 mA) 320 350 F (I = 100 mA) 415 490 F (I = 200 mA) 470 590 F Total Capacitance pF CT (V = 10 V, f = 1 MHz) 6.0 R Reverse Recovery Time t ns rr (I = I = 10 mA, I = 1.0 mA) 5.0 F R R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DC Current Source + t t r p 0.1 F 0 V 10% I 90% F 750 H V R Pulse Generator 0.1 F Output 50 Output Pulse Generator I F DUT Adjust for I RM t rr R = 50 L i = 1 mA R(REC) I RM Current Output Pulse Transformer (I = I = 10 mA measured F RM at i = 1 mA) R(REC) 50 Input Oscilloscope 1. DC Current Source is adjusted for a Forward Current (I ) of 10 mA. F 2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I of 10 mA. RM 3. Pulse Generator transition time << t . rr 4. IR(REC) is measured at 1 mA. Typically 0.1 X I or 0.25 X I . RM RM 5. t t p rr Figure 1. Recovery Time Equivalent Test Circuit

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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