NSR2030QMUTWG 2A, 30V Schottky Full Bridge These full bridge Schottky barrier diodes are designed for the rectification of the high speed signal of wireless charging. The NSR2030QMUTWG has a very low forward voltage that will reduce conduction loss. It is housed in a UDFN 3.5 x 3.5 x 0.5 mm package that is ideal for space constrained wireless applications. www.onsemi.com Features Extremely Fast Switching Speed MARKING Low Forward Voltage 0.54 V (Typ) I = 2 A F DIAGRAM These Devices are PbFree, Halogen Free and are RoHS Compliant 1 2030 UDFN4 3.5x3.5 Typical Applications AYWW CASE 517DA Low Voltage Full Bridge Rectification & Wireless Charging MAXIMUM RATINGS (T = 125C unless otherwise noted) (Note 1) J 2030 = Specific Device Code A = Assembly Location Rating Symbol Value Unit Y = Year Reverse Voltage V 30 V R WW = Work Week = PbFree Package Forward Current (DC) I 2.0 A F (Note: Microdot may be in either location) Forward Current Surge Peak I 12.5 A FSM (60 Hz, 1 cycle) NonRepetitive Peak Forward Current I A FSM PIN CONNECTIONS (Square Wave, T = 25C prior to surge) J t = 1 s 40 t = 1 ms 10 3.0 t = 1 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All specifications pertain to a single diode. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board P 2.08 W D DEVICE SCHEMATIC T = 25C (Note 2) A Derate above 25C 20.8 mW/C Thermal Resistance Junction to Ambient R 48 C/W JA (Note 2) Total Device Dissipation FR-5 Board P 0.75 W D T = 25C (Note 3) A Derate above 25C 7.6 mW/C Thermal Resistance Junction to Ambient R 132 C/W JA (Note 3) Total Device Dissipation FR-5 Board P 0.87 W D ORDERING INFORMATION T = 25C (Note 4) A Derate above 25C 8.8 mW/C Device Package Shipping Thermal Resistance Junction to Ambient R 114 C/W JA NSR2030QMUTWG UDFN4 3000 / Tape & (Note 4) (PbFree) Reel Junction Temperature T +125 C J For information on tape and reel specifications, Storage Temperature Range T 55 to C including part orientation and tape sizes, please stg +150 refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 2 2. 4 Layer JEDEC JESD51.7 FR4 10 mm , 1 oz. copper trace, still air. 2 3. Single Layer JEDEC JESD51.3 FR4 100 mm , 1 oz. copper trace, still air. 2 4. Single Layer JEDEC JESD51.3 FR4 100 mm , 2 oz. copper trace, still air. Semiconductor Components Industries, LLC, 2015 Publication Order Number: May, 2017 Rev. 1 NSR2030QMU/D MNSR2030QMUTWG ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 5) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I = 1.0 mA) V 30 V R (BR) Reverse Leakage (V = 30 V) I 5.0 20 A R R Forward Voltage (I = 0.5 A) V 0.41 0.455 V F F Forward Voltage (I = 1.0 A) V 0.46 0.55 V F F Forward Voltage (I = 2.0 A) V 0.54 0.65 V F F Reverse Recovery Time t 34 ns rr (I = I = 10 mA, I = 1.0 mA) F R R(REC) Input Capacitance (pins 1 to 3) (V = 1.0 V, f = 1.0 MHz) C 102 pF R T Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. All specifications pertain to a single diode. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2