NSS12100M3T5G ON Semiconductor

NSS12100M3T5G Low V , Transistor, CE(sat) PNP, 12 V, 1.0 A, SOT-723 Package 2 ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low NSS12100M3T5G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) 460 mW D T = 25C A Derate above 25C 3.7 mW/C Thermal Resistance, R (Note 1) 270 C/W JA Junction-to-Ambient Total Device Dissipation P (Note 2) 625 mW D T = 25C A Derate above 25C 5.0 mW/C Thermal Resistance, R (Note 2) 200 C/W JA Junction-to-Ambient Thermal Resistance, 105 C/W R JL Junction-to-Lead 3 Junction and Storage T , T -55 to +150 C J stg Temperature Range ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage, (I = -10 mAdc, I = 0) V -12 - - Vdc C B (BR)CEO Collector - Base Breakdown Voltage, (I = -0.1 mAdc, I = 0) V -12 - - Vdc C E (BR)CBO Emitter - Base Breakdown Voltage, (I = -0.1 mAdc, I = 0) V -5.0 - - Vdc E C (BR)EBO Collector Cutoff Current, (V = -12 Vdc, I = 0) I - -0.01 -0.1 Adc CB E CBO Emitter Cutoff Current, (V = -5.0 Vdc, I = 0) I - -0.01 -0.1 Adc CES E EBO ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = -10 mA, V = -2.0 V) 200 - - C CE (I = -500 mA, V = -2.0 V) 120 - - C CE (I = -1.0 A, V = -2.0 V) 80 - - C CE Collector - Emitter Saturation Voltage (Note 3) V V CE(sat) (I = -0.05 A, I = -0.005 A) (Note 4) - -0.030 -0.035 C B (I = -0.1 A, I = -0.002 A) - -0.060 -0.080 C B (I = -0.1 A, I = -0.010 A) - -0.040 -0.060 C B (I = -0.5 A, I = -0.050 A) - -0.155 -0.220 C B (I = -1.0 A, I = -0.100 A) - -0.350 -0.410 C B Base - Emitter Saturation Voltage (Note 3) V V BE(sat) (I = -1.0 A, I = -0.01 A) - 0.95 -1.15 C B Base - Emitter Turn-on Voltage (Note 3) V V BE(on) (I = -2.0 A, V = -2.0 V) - -1.05 -1.15 C CE SMALL-SIGNAL CHARACTERISTICS Input Capacitance (V = -0.5 V, f = 1.0 MHz) Cibo - 40 50 pF EB Output Capacitance (V = -3.0 V, f = 1.0 MHz) Cobo - 15 20 pF CB Noise Figure (I = 0.2 mA, V = 5.0 V, R = 1.0 k , f = 1.0 MHz, BW = 200 Hz) NF - - 5.0 dB C CE S 2 1. FR- 4 100 mm , 1 oz copper traces. 2 2. FR- 4 500 mm , 1 oz copper traces. 3. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2%. 4. Guaranteed by design but not tested.