NSS12200L 12 V, 4.0 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. www.onsemi.com Typical applications are DCDC converters and power management in portable and battery powered products such as cellular and cordless 12 VOLTS phones, PDAs, computers, printers, digital cameras and MP3 players. 4.0 AMPS Other applications are low voltage motor controls in mass storage PNP LOW V TRANSISTOR products such as disc drives and tape drives. In the automotive CE(sat) EQUIVALENT R 65 m industry they can be used in air bag deployment and in the instrument DS(on) 2 cluster. The high current gain allows e PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain COLLECTOR 3 (Beta) makes them ideal components in analog amplifiers. NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AEC-Q101 Qualified BASE and PPAP Capable* These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 Compliant EMITTER MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit 3 Collector-Emitter Voltage V 12 Vdc CEO 1 Collector-Base Voltage V 12 Vdc CBO 2 Emitter-Base Voltage V 7.0 Vdc EBO SOT23 (TO236) Collector Current Continuous I 2.0 A C CASE 318 Collector Current Peak I 4.0 A STYLE 6 CM Electrostatic Discharge ESD HBM Class 3B MM Class C MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit VE M Total Device Dissipation P (Note 1) 460 mW D T = 25C A 1 Derate above 25C 3.7 mW/C Thermal Resistance, R (Note 1) 270 C/W JA VE = Specific Device Code JunctiontoAmbient M = Date Code* = PbFree Package Total Device Dissipation P (Note 2) 540 mW D (Note: Microdot may be in either location) T = 25C A Derate above 25C 4.3 mW/C *Date Code orientation and/or overbar may vary depending upon manufacturing location. Thermal Resistance, R (Note 2) 230 C/W JA JunctiontoAmbient Total Device Dissipation P 710 mW Dsingle ORDERING INFORMATION (Single Pulse < 10 sec.) (Note 3) Device Package Shipping Junction and Storage T , T 55 to C J stg Temperature Range +150 NSS12200LT1G, SOT23 3000/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the NSV12200LT1G* (PbFree) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, 2 1. FR4 100 mm , 1 oz. copper traces. including part orientation and tape sizes, please 2 2. FR4 500 mm , 1 oz. copper traces. refer to our Tape and Reel Packaging Specification 3. Thermal response. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: October, 2016 Rev. 5 NSS12200L/DNSS12200L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 12 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 12 C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 7.0 E C Collector Cutoff Current I Adc CBO (V = 12 Vdc, I = 0) 0.1 CB E Emitter Cutoff Current I Adc EBO (V = 7.0 Vdc) 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 4) h FE (I = 10 mA, V = 2.0 V) 250 C CE (I = 500 mA, V = 2.0 V) 250 300 C CE (I = 1.0 A, V = 2.0 V) 200 C CE (I = 2.0 A, V = 2.0 V) 150 C CE Collector Emitter Saturation Voltage (Note 4) V V CE(sat) (I = 0.1 A, I = 0.010 A) (Note 5) 0.008 0.011 C B (I = 1.0 A, I = 0.100 A) 0.065 0.090 C B (I = 1.0 A, I = 0.010 A) 0.100 0.120 C B (I = 2.0 A, I = 0.200 A) 0.130 0.180 C B Base Emitter Saturation Voltage (Note 4) V V BE(sat) (I = 1.0 A, I = 0.01 A) 0.900 C B Base Emitter Turnon Voltage (Note 4) V V BE(on) (I = 1.0 A, V = 2.0 V) 0.900 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 100 C CE Input Capacitance (V = 0.5 V, f = 1.0 MHz) Cibo 350 pF EB Output Capacitance (V = 3.0 V, f = 1.0 MHz) Cobo 120 pF CB SWITCHING CHARACTERISTICS Delay (V = 10 V, I = 750 mA, I = 15 mA) t 60 ns CC C B1 d Rise (V = 10 V, I = 750 mA, I = 15 mA) t 120 ns CC C B1 r Storage (V = 10 V, I = 750 mA, I = 15 mA) t 250 ns CC C B1 s Fall (V = 10 V, I = 750 mA, I = 15 mA) t 130 ns CC C B1 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. 5. Guaranteed by design but not tested. www.onsemi.com 2