X-On Electronics has gained recognition as a prominent supplier of NSS12100XV6T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSS12100XV6T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSS12100XV6T1G ON Semiconductor

NSS12100XV6T1G electronic component of ON Semiconductor
NSS12100XV6T1G ON Semiconductor
NSS12100XV6T1G Bipolar Transistors - BJT
NSS12100XV6T1G  Semiconductors

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See Product Specifications
Part No. NSS12100XV6T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 12V PNP LOW VCE (SAT) XTR
Datasheet: NSS12100XV6T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6025 ea
Line Total: USD 0.6 
Availability - 8594
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
23280
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 4000
Multiples : 4000
4000 : USD 0.1506

8594
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.6025
10 : USD 0.3725
100 : USD 0.2403
500 : USD 0.1892
1000 : USD 0.1617
2500 : USD 0.1562
4000 : USD 0.1496

80
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 3
Multiples : 1
3 : USD 0.5362
25 : USD 0.3276
80 : USD 0.2296
218 : USD 0.217

20773
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 2637
Multiples : 1
2637 : USD 0.1779

100113
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 2637
Multiples : 1
2637 : USD 0.1779

23280
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 4000
Multiples : 4000
4000 : USD 0.1506

14352
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 2637
Multiples : 1
2637 : USD 0.1779

375397
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 2637
Multiples : 1
2637 : USD 0.1779

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSS12100XV6T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSS12100XV6T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NSS12100XV6T1G Low V Transistor, PNP, CE(sat) 12 V, 1.0 A, SOT-563 Package 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low NSS12100XV6T1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) 500 mW D T = 25 C A Derate above 25 C 4.0 mW/ C Thermal Resistance, R (Note 1) 250 C/W JA Junction toAmbient Total Device Dissipation P (Note 2) 650 mW D T = 25 C A Derate above 25 C 5.2 mW/ C Thermal Resistance, R (Note 2) 192 C/W JA Junction toAmbient Thermal Resistance, R 105 C/W JL JunctiontoLead 6 Total Device Dissipation P Single 1.0 W D (Single Pulse < 10 sec.) Junction and Storage T , T 55 to +150 C J stg Temperature Range ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, (I = 10 mAdc, I = 0) V 12 Vdc C B (BR)CEO Collector Base Breakdown Voltage, (I = 0.1 mAdc, I = 0) V 12 Vdc C E (BR)CBO Emitter Base Breakdown Voltage, (I = 0.1 mAdc, I = 0) V 5.0 Vdc E C (BR)EBO Collector Cutoff Current, (V = 12 Vdc, I = 0) I 0.02 0.1 Adc CB E CBO Emitter Cutoff Current, (V = 5.0 Vdc, I = 0) I 0.03 0.1 Adc CES E EBO ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 10 mA, V = 2.0 V) 200 C CE (I = 500 mA, V = 2.0 V) 100 C CE (I = 1.0 A, V = 2.0 V) 90 C CE Collector Emitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.05 A, I = 0.005 A) (Note 4) 0.030 0.040 C B (I = 0.1 A, I = 0.002 A) 0.080 0.100 C B (I = 0.1 A, I = 0.010 A) 0.050 0.060 C B (I = 0.5 A, I = 0.050 A) 0.200 0.225 C B (I = 1.0 A, I = 0.100 A) 0.400 0.440 C B Base Emitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 0.01 A) 0.95 1.15 C B Base Emitter Turnon Voltage (Note 3) V V BE(on) (I = 2.0 A, V = 3.0 V) 1.05 1.15 C CE Input Capacitance (V = 0.5 V, f = 1.0 MHz) Cibo 50 pF EB Output Capacitance (V = 3.0 V, f = 1.0 MHz) Cobo 20 pF CB 2 1. FR4 100 mm , 1 oz copper traces. 2 2. FR4 500 mm , 1 oz copper traces. 3. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2%. 4. Guaranteed by design but not tested.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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