NSS12100UW3TCG 12 V, 1 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) NSS12100UW3TCG THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, T = 25C P (Note 1) 740 mW A D Derate above 25C 6.0 mW/C Thermal Resistance, JunctiontoAmbient 169 C/W R (Note 1) JA Total Device Dissipation, T = 25C P (Note 2) 1.1 W A D Derate above 25C 9.0 mW/C Thermal Resistance, JunctiontoAmbient R (Note 2) 110 C/W JA Thermal Resistance, JunctiontoLead 6 33 C/W R (Note 2) JL Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 100 mm , 1 oz copper traces. 2 2. FR4 500 mm , 1 oz copper traces. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage, (I = 10 mAdc, I = 0) V 12 Vdc C B (BR)CEO CollectorBase Breakdown Voltage, (I = 0.1 mAdc, I = 0) V 12 Vdc C E (BR)CBO EmitterBase Breakdown Voltage, (I = 0.1 mAdc, I = 0) V 5.0 Vdc E C (BR)EBO Collector Cutoff Current, (V = 12 Vdc, I = 0) I 0.02 0.1 Adc CB E CBO Emitter Cutoff Current, (V = 5.0 Vdc, I = 0) I 0.03 0.1 Adc CES E EBO ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 10 mA, V = 2.0 V) 200 400 C CE (I = 500 mA, V = 2.0 V) 100 250 C CE (I = 1.0 A, V = 2.0 V) 75 C CE CollectorEmitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.05 A, I = 0.005 A) (Note 4) 0.030 0.040 C B (I = 0.1 A, I = 0.002 A) 0.080 0.100 C B (I = 0.1 A, I = 0.010 A) 0.050 0.060 C B (I = 0.5 A, I = 0.050 A) 0.200 0.225 C B (I = 1.0 A, I = 0.100 A) 0.400 0.440 C B BaseEmitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 0.01 A) 0.95 1.15 C B BaseEmitter Turnon Voltage (Note 3) V V BE(on) (I = 2.0 A, V = 1.0 V) 1.05 1.20 C CE Input Capacitance (V = 0.5 V, f = 1.0 MHz) Cibo 40 50 pF EB Output Capacitance (V = 3.0 V, f = 1.0 MHz) Cobo 15 20 pF CB SWITCHING CHARACTERISTICS Delay (V = 10 V, I = 750 mA, I = 15 mA) t 20 ns CC C B1 d Rise (V = 10 V, I = 750 mA, I = 15 mA) t 90 ns CC C B1 r Storage (V = 10 V, I = 750 mA, I = 15 mA) t 140 ns CC C B1 s Fall (V = 10 V, I = 750 mA, I = 15 mA) t 100 ns CC C B1 f SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product, (I = 100 mA, V = 5 Vdc, f = 100 MHz) f 200 MHz C CE T NF 5.0 dB Noise Figure, (I = 0.2 mA, V = 5 Vdc, R = 2 k , f = 1 kHz, BW = 200Hz) C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2%. 4. Guaranteed by design but not tested.