NSR20F20 Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. www.onsemi.com Features 20 V SCHOTTKY Low Forward Voltage Drop 450 mV 2.0 A Low Reverse Current 30 A 10 V VR BARRIER DIODE 2.0 A of Continuous Forward Current Power Dissipation of 665 mW with Minimum Trace 1 2 ESD Rating Human Body Model: Class 3B CATHODE ANODE ESD Rating Machine Model: Class C High Switching Speed 2 MARKING These Devices are PbFree, Halogen Free/BFR Free and are RoHS DIAGRAM Compliant PIN 1 Typical Applications 1 20F20 DSN2 LCD and Keypad Backlighting YYY (0603) Camera Photo Flash CASE 152AB Buck and Boost dcdc Converters 20F20 = Specific Device Code Reverse Voltage and Current Protection YYY = Year Code Clamping & Protection Markets ORDERING INFORMATION Mobile Handsets MP3 Players Device Package Shipping Digital Camera and Camcorders NSR20F20NXT5G DSN2 5000 / Tape & Reel (PbFree) Notebook PCs & PDAs GPS For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications MAXIMUM RATINGS Brochure, BRD8011/D. Rating Symbol Value Unit Reverse Voltage V 20 V R Forward Current (DC) I 2.0 A F Forward Surge Current (60 Hz 1 cycle) I 28 A FSM Repetitive Peak Forward Current I 4.0 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) ESD Rating: Human Body Model ESD > 8 kV Machine Model > 400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2016 Rev. 3 NSR20F20/DNSR20F20 THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 213 C/W JA Total Power Dissipation T = 25C P 586 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 80 C/W JA Total Power Dissipation T = 25C P 1.56 W A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 30 R (V = 20 V) 150 R Forward Voltage V V F (I = 1.0 A) 0.390 0.420 F (I = 2.0 A) 0.450 0.470 F Reverse Recovery Time t 80 ns rr (I = I = 10 mA, I = 1.0 mA, Figure 4) F R R(REC) www.onsemi.com 2