BAT54SW Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount www.onsemi.com package is excellent for hand held and portable applications where space is limited. 30 VOLT Features DUAL SERIES SCHOTTKY Extremely Fast Switching Speed BARRIER DIODES Low Forward Voltage 0.35 Volts (Typ) I = 10 mAdc F NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SOT323 CASE 419 STYLE 9 MAXIMUM RATINGS (T = 125C unless otherwise noted) J Rating Symbol Value Unit 1 2 ANODE CATHODE Reverse Voltage V 30 V R 3 Total Power Dissipation P D CATHODE/ANODE T = 25C 200 mW A Derate above 25C 1.6 mW/C MARKING DIAGRAM Forward Current (DC) I 200 mA F NonRepetitive Peak Forward Current I mA FSM t < 10 msec 600 p B8M Repetitive Peak Forward Current I mA FRM Pulse Wave = 1 sec, 300 Duty Cycle = 66% 1 Junction Temperature T 55 to 125 C J B8 = Device Code M = Date Code* Storage Temperature Range T 55 to +150 C stg = PbFree Package Electrostatic Discharge ESD HM < 8000 V (Note: Microdot may be in either location) MM < 400 V *Date Code orientation may vary depending up- Stresses exceeding those listed in the Maximum Ratings table may damage the on manufacturing location. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping BAT54SWT1G SOT323 3,000 / (PbFree) Tape & Reel NSVBAT54SWT1G SOT323 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 Publication Order Number: 1 April, 2019 Rev. 12 BAT54SWT1/DBAT54SW ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) 30 R Reverse Leakage I A R (V = 25 V) 0.5 2.0 R Forward Voltage V V F (I = 0.1 mA) 0.22 0.24 F (I = 1.0 mA) 0.29 0.32 F (I = 10 mA) 0.35 0.40 F (I = 30 mA) 0.41 0.5 F (I = 100 mA) 0.52 0.8 F Total Capacitance C pF T (V = 1.0 V, f = 1.0 MHz) 7.6 10 R Reverse Recovery Time t ns rr (I = I = 10 mAdc, I = 1.0 mAdc, Figure 1) 5.0 F R R(REC) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2 k 0.1 F I F t t T r p I F 100 H t T 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2