BAV99W, BAV99RW SC-70/SOT-323 Dual Series Switching Diodes The BAV99WT1G is a smaller package, equivalent to the BAV99LT1G. www.onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SC70 CASE 419 Compliant* ANODE CATHODE Suggested Applications 1 2 ESD Protection Polarity Reversal Protection 3 Data Line Protection CATHODE/ANODE BAV99WT1 Inductive Load Protection SC70, CASE 419, STYLE 9 Steering Logic CATHODE ANODE 1 2 MAXIMUM RATINGS (Each Diode) 3 Rating Symbol Value Unit CATHODE/ANODE Reverse Voltage V 100 Vdc R BAV99RWT1 SC70, CASE 419, STYLE 10 Forward Current I 215 mAdc F Peak Forward Surge Current I 500 mAdc FM(surge) MARKING DIAGRAM Repetitive Peak Reverse Voltage V 100 V RRM A7 = BAV99W Average Rectified Forward Current I 715 mA F(AV) X7 M F7 = BAV99RW (Note 1) (averaged over any 20 ms period) M = Date Code = PbFree Package 1 Repetitive Peak Forward Current I 450 mA FRM NonRepetitive Peak Forward Current I A FSM 2.0 t = 1.0 s ORDERING INFORMATION t = 1.0 ms 1.0 t = 1.0 s 0.5 Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the BAV99WT1G SC70 3,000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. SBAV99WT1G SC70 3,000 / Tape & Reel 1. FR5 = 1.0 0.75 0.062 in. (PbFree) BAV99RWT1G SC70 3,000 / Tape & Reel (PbFree) SBAV99RWT1G SC70 3,000 / Tape & Reel (PbFree) NSVBAV99WT3G SC70 10,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: November, 2017 Rev. 10 BAV99WT1/DBAV99W, BAV99RW THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (Note 1) T = 25C P 200 mW A D Derate above 25C 1.6 mW/C Thermal Resistance JunctiontoAmbient R 625 C/W JA Total Device Dissipation Alumina Substrate, (Note 2) T = 25C P 300 mW A D Derate above 25C 2.4 mW/C Thermal Resistance JunctiontoAmbient R 417 C/W JA Junction and Storage Temperature T , T 65 to +150 C J stg ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 A) 100 (BR) Reverse Voltage Leakage Current I Adc R (V = 100 Vdc) 1.0 R (V = 25 Vdc, T = 150C) 30 R J (V = 70 Vdc, T = 150C) 50 R J Diode Capacitance C pF D (V = 0, f = 1.0 MHz) 1.5 R Forward Voltage V mVdc F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Reverse Recovery Time t ns rr (I = I = 10 mAdc, i = 1.0 mAdc) (Figure 1) R = 100 6.0 F R R(REC) L Forward Recovery Voltage V V FR (I = 10 mA, t = 20 ns) 1.75 F r Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 820 +10 V 2 k 0.1 F I F t t t r p I F 100 H 10% t t rr 0.1 F DUT 90% 50 OUTPUT 50 INPUT i = 1 mA R(REC) PULSE SAMPLING I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: (a) A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: (b) Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: (c) t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2