MUN5212DW1, NSBC124EDXV6, NSBC124EDP6 Dual NPN Bias Resistor Transistors www.onsemi.com R1 = 22 k , R2 = 22 k PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R 1 device and its external resistor bias network. The Bias Resistor R 2 Transistor (BRT) contains a single transistor with a monolithic bias Q 1 network consisting of two resistors a series base resistor and a base-emitter resistor. The BRT eliminates these individual Q 2 components by integrating them into a single device. The use of a BRT R 2 R 1 can reduce both system cost and board space. Features (4) (5) (6) Simplifies Circuit Design Reduces Board Space MARKING DIAGRAMS Reduces Component Count 6 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT363 7B M AEC-Q101 Qualified and PPAP Capable* CASE 419B02 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant MAXIMUM RATINGS SOT563 7B M (T = 25C, common for Q and Q , unless otherwise noted) A 1 2 CASE 463A 1 Rating Symbol Max Unit Collector-Base Voltage V 50 Vdc CBO Collector-Emitter Voltage V 50 Vdc CEO SOT963 R M Collector Current Continuous I 100 mAdc C CASE 527AD 1 Input Forward Voltage V 40 Vdc IN(fwd) Input Reverse Voltage V 10 Vdc IN(rev) 7B/R = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = Pb-Free Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) ORDERING INFORMATION *Date Code orientation may vary depending Device Package Shipping upon manufacturing location. MUN5212DW1T1G, SOT363 3,000/Tape & Reel NSVMUN5212DW1T1G* NSBC124EDXV6T1G SOT563 4,000/Tape & Reel NSBC124EDXV6T5G SOT563 8,000/Tape & Reel NSBC124EDP6T5G SOT963 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 73 Publication Order Number: June, 2017 Rev. 1 DTC124ED/DMUN5212DW1, NSBC124EDXV6, NSBC124EDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5212DW1 (SOT 363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 49) 187 mW A (Note 50) 256 Derate above 25C (Note 49) 1.5 mW/C (Note 50) 2.0 Thermal Resistance, (Note 49) R 670 C/W JA Junction to Ambient (Note 50) 490 MUN5212DW1 (SOT363) BOTH JUNCTION HEATED (Note 51) Total Device Dissipation P D T = 25C (Note 49) 250 mW A (Note 50) 385 Derate above 25C (Note 49) 2.0 mW/C (Note 50) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 49) 493 (Note 50) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 49) 188 (Note 50) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC124EDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 49) 357 mW A Derate above 25C (Note 49) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 49) 350 NSBC124EDXV6 (SOT563) BOTH JUNCTION HEATED (Note 51) Total Device Dissipation P D T = 25C (Note 49) 500 mW A Derate above 25C (Note 49) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 49) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC124EDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 52) 231 MW A (Note 53) 269 Derate above 25C (Note 52) 1.9 mW/C (Note 53) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 52) 540 (Note 53) 464 NSBC124EDP6 (SOT963) BOTH JUNCTION HEATED (Note 51) Total Device Dissipation P D T = 25C (Note 52) 339 MW A (Note 53) 408 Derate above 25C (Note 52) 2.7 mW/C (Note 53) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 52) 369 (Note 53) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 49.FR4 Minimum Pad. 50.FR4 1.0 1.0 Inch Pad. 51.Both junction heated values assume total power is sum of two equally powered channels. 2 52.FR4 100 mm , 1 oz. copper traces, still air. 2 53.FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 74