BAV99HDW-13 Diodes Incorporated

BAV99HDW SURFACE MOUNT SWITCHING DIODE ARRAY Features Mechanical Data Fast Switching Speed Case: SOT363 High Reverse Breakdown Voltage Case Material: Molded Plastic, Green Molding Compound; Low Leakage Current UL Flammability Classification Rating 94V-0 Low Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Two BAV99 Circuits In One Package Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe; Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Polarity: See Diagram Qualified to AEC-Q101 Standards for High Reliability Weight: 0.006 grams (Approximate) An Automotive-Compliant Part is Available Under Separate Datasheet (BAV99HDWQ) SOT363 AC C A 2 2 1 AC A C 1 1 2 Top View Top View Internal Schematic Ordering Information (Notes 4) Part Number Qualification Case Packaging BAV99HDW-13 AEC-Q101 SOT363 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BAV99HDW Maximum Ratings (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 100 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 71 V R(RMS) Forward Continuous Current (Note 5) I 200 mA FM Repetitive Peak Forward Current I 500 mA FRM @ t = 1.0s 4 Non-Repetitive Peak Forward Surge Current @ t = 1.0ms I 1.0 A FSM @ t = 1.0s 0.5 Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 250 mW PD Thermal Resistance Junction to Ambient Air (Note 5) 500 C/W R JA Thermal Resistance Junction to Solder Point (Note 6) 260 C/W R JSP Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics (@T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V 100 V I = 2.5A (BR)R R 0.715 I = 1.0mA F 0.855 I = 10mA F Forward Voltage V V F 1.0 I = 50mA F 1.25 I = 150mA F 0.5 V = 80V R 50 A V = 80V, T = +150C R J Reverse Current (Note 7) I R 30 V = 25V, T = +150C R J 30 nA V = 25V R Total Capacitance C 1.5 pF V = 0, f = 1.0MHz T R I = I = 10mA, F R Reverse Recovery Time t 4.0 ns RR IRR = 0.1 x IR, RL = 100 Forward Recovery Voltage 1.75 V V IF = 10 mA; t = 20ns FR R Notes: 5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at