STEALTH Diode 30 A, 600 V ISL9R3060G2, ISL9R3060P2 Description The ISL9R3060G2, ISL9R3060P2 is a STEALTH diode optimized for low loss performance in high frequency hard switched www.onsemi.com applications. The STEALTH family exhibits low reverse recovery current (I ) and exceptionally soft recovery under typical operating rr JEDEC STYLE ANODE conditions. This device is intended for use as a free wheeling or boost 2 LEAD TO2472L diode in power supplies and other power switching applications. CATHODE The low I and short ta phase reduce loss in switching transistors. rr CATHODE The soft recovery minimizes ringing, expanding the range (BOTTOM SIDE METAL) of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power JEDEC CATHODE density design at lower cost. TO220AC2L (FLANGE) Features Stealth Recovery, t = 36 ns ( I = 30 A) rr F CATHODE Max Forward Voltage, V = 2.4 V ( T = 25C) F C ANODE 600 V Reverse Voltage and High Reliability Avalanche Energy Rated MARKING DIAGRAM This Device is PbFree and is RoHS Compliant Applications SMPS Y&Z&3&K Hard Switched PFC Boost Diode R3060X2 UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code R3060X2 = Specific Device Code X =G/P K A ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: March, 2020 Rev. 5 ISL9R3060P2/DISL9R3060G2, ISL9R3060P2 DEVICE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Average Rectified Forward Current I 30 A F(AV) Repetitive Peak Surge Current (20 kHz Square Wave ) I 70 A FRM Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz) I 325 A FSM Power Dissipation P 200 W D Avalanche Energy (1 A, 40 mH) E 20 mJ AVL Operating and Storage Temperature Range T T 55 to 175 C J, STG Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s T 300 C L Maximum Temperature for Soldering Package Body for 10 s T 260 C PKG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Packing Part Number Top Mark Package Methode Reel Size Tape Width Quantity R3060G2 ISL9R3060G2 TO2472L Tube N/A N/A 30 R3060G2 ISL9R3060P2 TO220AC2L Tube N/A N/A 50 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF STATE CHARACTERISTICS I Instantaneous Reverse Current V = 600 V T = 25C 100 A R R C T = 125C 1 mA C ON CHARACTERISTICS V Instantaneous Forward Voltage I = 30 A T = 25C 2.1 2.4 V F F C T = 125C C 1.7 2.1 V DYNAMIC CHARACTERISTICS V = 10 V, I = 0 A C Junction Capacitance R F 120 pF J SWITCHING CHARACTERISTICS I = 1 A, di /dt = 100 A/ s, V = 30 V T Reverse Recovery Time F F R 27 35 ns rr I = 30 A, di /dt = 100 A/ s, V = 30V 36 45 ns F F R T Reverse Recovery Time I = 30 A 36 ns rr F di /dt = 200 A/ s F I Reverse Recovery Current 2.9 A RR V = 390 V R T = 25C C Q Reverse Recovery Charge 55 nC RR T Reverse Recovery Time I = 30 A 110 ns rr F dIF/dt = 200 A/ s S Softness Factor (t /t ) 1.9 b a V = 390 V, R T = 125C C I Reverse Recovery Current 6 A RR Q Reverse Recovery Charge 450 nC RR www.onsemi.com 2