ISL9R8120P2, ISL9R8120S3S 8 A, 1200 V, STEALTH Diode June 2002 tm ISL9R8120P2 , ISL9R8120S3S Features 8 A, 1200 V, STEALTH Diode Stealth Recovery t = 300 ns ( I = 8 A) rr F Max Forward Voltage, V = 3.3 V ( T = 25C) F C The ISL9R8120P2, ISL9R8120S3S is a STEALTH diode optimized for low loss performance in high frequency hard 1200 V Reverse Voltage and High Reliability switched applications. The STEALTH family exhibits low Avalanche Energy Rated reverse recovery current (I ) and exceptionally soft RM(REC) RoHS compliant recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I and short ta phase reduce loss in switching RM(REC) Applications transistors. The soft recovery minimizes ringing, expanding Switch Mode Power Supplies the range of conditions under which the diode may be Hard Switched PFC Boost Diode operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to UPS Free Wheeling Diode provide the most efficient and highest power density design Motor Drive FWD at lower cost. SMPS FWD Snubber Diode Package Symbol JEDEC TO-220AC JEDEC TO-263AB K ANODE CATHODE CATHODE CATHODE (BOTTOM SIDE (FLANGE) METAL) N / C A ANODE Device Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Rating Unit V Repetitive Peak Reverse Voltage 1200 V RRM V Working Peak Reverse Voltage 1200 V RWM V DC Blocking Voltage 1200 V R o I Average Rectified Forward Current (T = 105 C) 8 A F(AV) C I Repetitive Peak Surge Current (20 kHz Square Wave) 16 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) 100 A FSM P Power Dissipation 71 W D E Avalanche Energy (1 A, 40 mH) 20 mJ AVL T , T Operating and Storage Temperature Range -55 to 150 C J STG T Maximum Temperature for Soldering L T Leads at 0.063 in (1.6 mm) from Case for 10 s 300 C PKG Package Body for 10s, See Application Note AN-7528 260 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2002 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com ISL9R8120P2, ISL9R8120S3S Rev. BISL9R8120P2, ISL9R8120S3S 8 A, 1200 V, STEALTH Diode Package Marking and Ordering Information Device Marking Device Package Tape Width Quantity R8120P2 ISL9R8120P2 TO-220AC N/A 50 R8120S3S ISL9R8120S3S TO-263AB 24mm 800 Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Unit Off State Characteristics I Instantaneous Reverse Current V = 1200 V T = 25C - - 100 A R R C T = 125C- - 1.0mA C On State Characteristics V Instantaneous Forward Voltage I = 8 A T = 25C- 2.83.3 V F F C T = 125C- 2.7 3.1 V C Dynamic Characteristics C Junction Capacitance V = 10 V, I = 0 A - 30 - pF J R F Switching Characteristics t Reverse Recovery Time I = 1 A, dI /dt = 100 A/s, V = 30 V - 25 32 ns rr F F R I = 8 A, dI /dt = 100 A/s, V = 30 V - 35 44 ns F F R I = 8 A, t Reverse Recovery Time - 300 - ns F rr dI /dt = 200 A/s, F I Reverse Recovery Current - 4.3 - A rr V = 780 V, T = 25C R C Q Reverse Recovered Charge - 525 - nC rr I = 8 A, t Reverse Recovery Time - 375 - ns F rr dI /dt = 200 A/s, F S Softness Factor (t /t)-9-- b a V = 780 V, R I Reverse Recovery Current - 5.5 - A rr T = 125C C Q Reverse Recovered Charge - 1.1 - C rr I = 8 A, t Reverse Recovery Time - 200 - ns F rr dI /dt = 1000 A/s, F S Softness Factor (t /t)-5.5-- b a V = 780 V, R I Reverse Recovery Current - 11 - A rr T = 125C C Q Reverse Recovered Charge - 1.2 - C rr dI /dt Maximum di/dt during t - 310 - A/s M b Thermal Characteristics R Thermal Resistance Junction to Case TO-220, TO-263 - - 1.75 C/W JC R Thermal Resistance Junction to Ambient TO-220, TO-263 - - 62 C/W JA 2002 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com ISL9R8120P2, ISL9R8120S3S Rev. B