DATA SHEET www.onsemi.com ECOSPARK Ignition IGBT COLLECTOR 300 mJ, 400 V, NChannel Ignition IGBT R 1 GATE ISL9V3040D3S, R 2 ISL9V3040S3S, ISL9V3040P3 EMITTER General Description The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving DPak (TO252), as well as the industry standard 2 D Pak (TO263), and TO262 and TO220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the 2 DPAK3 D PAK3 need for external components. CASE 369AS CASE 418AJ ECOSPARK devices can be custom made to specific clamp voltages. Contact your nearest onsemi sales office for more information. Formerly Developmental Type 49362. Features Space Saving DPak Package Availability TO2203LD SCIS Energy = 300 mJ at T = 25C CASE 340AT J Logic Level Gate Drive AECQ101 Qualified and PPAP Capable MARKING DIAGRAMS These are PbFree Devices AYWW Applications XXX Automotive Ignition Coil Driver Circuits XXXXXG AYWWZZ CoilOn Plug Application XXXXX A = Assembly Location Y = Year WW = Work Week XXXX = Device Code ZZ = Assembly Lot Number G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: November, 2021 Rev. 4 ISL9V3040P3/DISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3 MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Rating Unit BV Collector to Emitter Breakdown Voltage (I = 1 mA) 430 V CER C BV Emitter to Collector Voltage Reverse Battery Condition (I = 10 mA) 24 V ECS C E At Starting T = 25C, I = 14.2 A, L = 3.0 mHy 300 mJ SCIS25 J SCIS E At Starting T = 150C, I = 10.6 A, L = 3.0 mHy 170 mJ SCIS150 J SCIS I Collector Current Continuous, At T = 25C, See Fig 9 21 A C25 C I Collector Current Continuous, At T = 110C, See Fig 9 17 A C110 C V Gate to Emitter Voltage Continuous 10 V GEM P Power Dissipation Total T = 25C 150 W D C Power Dissipation Derating T > 25C 1.0 W/C C T Operating Junction Temperature Range 40 to 175 C J T Storage Junction Temperature Range 40 to 175 C STG T Max Lead Temp for Soldering (Leads at 1.6 mm from Case for 10 s) 300 C L T Max Lead Temp for Soldering (Package Body for 10 s) 260 C pkg ESD Electrostatic Discharge Voltage at 100 pF, 1500 4 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Units Thermal Resistance Junction Case R 1.0 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Typ. Max. Units OFF CHARACTERISTICS BV Collector to Emitter Breakdown I = 2 mA, V = 0 V, 370 400 430 V CER C GE Voltage R = 1 k , See Figure 15 G T = 40 to 150C J BV Collector to Emitter Breakdown I = 10 mA, V = 0 V, 390 420 450 V CES C GE Voltage R = 0, See Figure 15 G T = 40 to 150C J BV Emitter to Collector Breakdown I = 75 mA, V = 0 V, 30 V ECS C GE Voltage T = 25C C BV Gate to Emitter Breakdown Voltage I = 2 mA 12 14 V GES GES I Collector to Emitter Leakage Current V = 250 V T = 25C 25 A CER CER C R = 1 k G T = 150C 1 mA See Figure 11 C I Emitter to Collector Leakage Current V = 24 V, T = 25C 1 mA ECS EC C See Figure 11 T = 150C 40 C R Series Gate Resistance 70 1 R Gate to Emitter Resistance 10K 26K 2 ON CHARACTERISTICS V Collector to Emitter Saturation I = 6 A, T = 25C, 1.25 1.60 V CE(SAT) C C Voltage V = 4 V See Figure 3 GE V Collector to Emitter Saturation I = 10 A, T = 150C, 1.58 1.80 V CE(SAT) C C Voltage V = 4.5 V See Figure 4 GE V Collector to Emitter Saturation I = 15 A, T = 150C 1.90 2.20 V CE(SAT) C C Voltage V = 4.5 V GE www.onsemi.com 2