N-Channel JFET J109, MMBFJ108 Features This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory Sourced from Process 58 www.onsemi.com These are PbFree Devices MAXIMUM RATINGS (T = 25C unless otherwise specified) (Notes 1, 2) A Symbol Parameter Value Unit V DrainGate Voltage 25 V DG V GateSource Voltage 25 V 1 GS I Forward Gate Current 10 mA GF TO92 3 4.825x4.76 T , T Operating and Storage Junction 55 to 150 C J STG CASE 135AN Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady state limits. ON Semiconductor should be consulted on applications involving pulsed or lowdutycycle operations. 1 THERMAL CHARACTERISTICS (T = 25C unless otherwise specified) A TO92 3 4.83x4.76 Max LEADFORMED J109 MMBFJ108 CASE 135AR (Note 3) (Note 4) Symbol Parameter Unit P Total Device Dissipation 625 350 mW D 3 Derate Above 25C 5.0 2.8 mW/C 1 Thermal Resistance, 125 C/W R JC 2 JunctiontoCase SOT23/SUPERSOT 23, R Thermal Resistance, 200 357 C/W JA 3 LEAD, 1.4x2.9 JunctiontoAmbient CASE 527AG 3. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 1. Drain, 2. Source, 3. Gate 4. Device mounted on FR4 PCB 36 mm x 18 mm x 1.5 mm mounting pad for 2 the collector lead minimum 6 cm . MARKING DIAGRAM Y&Z&3&K Y&Z&3 J109 J109 &Y I8 &G J109 J109D26Z MMBFJ108 J109, I8 = Specific Device Code Y = ON Semiconductor Logo &Y = Year Coding &G = Weekly Date Code &Z = Assembly Plant Code &3 = Date Code Format &K = Lot Run Traceability Code ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: December, 2020 Rev. 4 J109/DJ109, MMBFJ108 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS V GateSource Breakdown Voltage I = 10 A, V = 0 25 V (BR)GSS G DS I Gate Reverse Current nA V = 15 V, V = 0 3.0 GSS GS DS V = 15 V, V = 0, T = 100C 200 GS DS A V (off) GateSource CutOff Voltage V = 15 V, I = 10 nA MMBFJ108 3.0 10.0 V GS DS D J109 2.0 6.0 ON CHARACTERISTICS I ZeroGate Voltage Drain Current (Note 5) V = 15 V, V = 0 MMBFJ108 80 mA DSS DS GS J109 40 r (on) DrainSource On Resistance V 0.1 V, V = 0 MMBFJ108 8.0 DS DS GS J109 12 SMALL SIGNAL CHARACTERISTICS C (on) DrainGate & SourceGate On Capacitance V = 0, V = 0, f = 1.0 MHz 85 pF dg DS GS C (off) sg C (off) DrainGate Off Capacitance V = 0, V = 10 V, f = 1.0 MHz 15 pF dg DS GS C (off) SourceGate Off Capacitance V = 0, V = 10 V, f = 1.0 MHz 15 pF sg DS GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse test: pulse width 300 s, duty cycle 2%. TYPICAL PERFORMANCE CHARACTERISTICS 300 V = 10 mV GS Unit with Typical V = 500 mV GS V (off) = 7.8 V GS V = 1.0 V T = 25C GS A 250 V = 1.5 V GS V = 2.0 V GS V = 2.5 V GS 200 V = 3.0 V GS V = 3.5 V GS V = 4.0 V 150 GS V = 4.5 V GS 100 V = 5.0 V GS V = 5.5 V GS 50 V = 6.5 V GS V = 6.0 V GS V = 7.0 V GS 0 012 345 6789 10 11 12 13 14 15 V , DRAIN SOURCE VOLTAGE (V) DS Figure 1. Common Drain Source, MMBFJ108 www.onsemi.com 2 I , DRAIN CURRENT (mA) D