N-Channel Switch J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 Features www.onsemi.com This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers Sourced from Process 51 Source & Drain are Interchangeable These are PbFree Devices G S D ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A TO92 3 4.83x4.76 LEADFORMED (Note 1, 2) CASE 135AR Symbol Parameter Value Unit V DrainGate Voltage 35 V DG V GateSource Voltage 35 V GS I Forward Gate Current 50 mA GF G T , T Operating and Storage Junction 55 to 150 C J STG S D Temperature Range TO92 3 4.825x4.76 Stresses exceeding those listed in the Maximum Ratings table may damage the CASE 135AN device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. G 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady state limits. ON Semiconductor should be consulted on applications involving pulsed or lowdutycycle operations. D S THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A SOT23 (TO236) CASE 31808 Max MMBFJ111 / G J111 / J112 / MMBFJ112 / J113 MMBFJ113 D (Note 3) (Note 4) Symbol Parameter Unit S P Total Device Dissipation 625 350 mW D SOT23 CASE 318BM Derate Above 25 C 5.0 2.8 mW/C R Thermal Resistance, 125 C/W JC JunctiontoCase MARKING DIAGRAM R Thermal Resistance, 200 357 C/W JA JunctiontoAmbient ZXYY XXM XXXX 3. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 1 4. Device mounted on FR4 PCB 36 mm x 18 mm x 1.5 mm mounting pad for 2 the collector lead minimum 6 cm . XX, XXXX = Specific Device Code Z = Assembly Plant Code XYY = 3Digit Date Code M = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: September, 2020 Rev. 3 MMBFJ113/DJ111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS V GateSource Breakdown Voltage I = 1.0 A, V = 0 35 V (BR)GSS G DS I Gate Reverse Current V = 15 V, V = 0 1.0 nA GSS GS DS V (off) GateSource CutOff Voltage V = 5 V, I = 1.0 A 111 3.0 10.0 V GS DS D 112 1.0 5.0 113 0.5 3.0 I (off) Drain Cutoff Leakage Current V = 5.0 V, V = 10 V 1.0 nA D DS GS ON CHARACTERISTICS I ZeroGate Voltage Drain Current (Note 5) V = 15 V, V = 0 111 20 mA DSS DS GS 112 5.0 113 2.0 r (on) DrainSource On Resistance V 0.1 V, V = 0 111 30 DS DS GS 112 50 113 100 SMALL SIGNAL CHARACTERISTICS C (on) DrainGate &SourceGate On Capacitance V = 0, V = 0, f = 1.0 MHz 28 pF dg DS GS C (on) sg C (off) DrainGate Off Capacitance V = 0, V = 10 V, f = 1.0 MHz 5.0 pF dg DS GS C (off) SourceGate Off Capacitance V = 0, V = 10 V, f = 1.0 MHz 5.0 pF sg DS GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse test: pulse width 300 s, duty cycle 2%. www.onsemi.com 2