X-On Electronics has gained recognition as a prominent supplier of CMPF4416A TR JFET across the USA, India, Europe, Australia, and various other global locations. CMPF4416A TR JFET are a product manufactured by Central Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

CMPF4416A TR Central Semiconductor

CMPF4416A TR electronic component of Central Semiconductor
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Part No.CMPF4416A TR
Manufacturer: Central Semiconductor
Category: JFET
Description: JFET 35V N-Ch JFET 35Vgs 10mA 350mW
Datasheet: CMPF4416A TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
15000: USD 0.6615 ea
Line Total: USD 9922.5 
Availability - 0
MOQ: 15000  Multiples: 15000
Pack Size: 15000
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 15000
Multiples : 15000
15000 : USD 0.6615

   
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We are delighted to provide the CMPF4416A TR from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMPF4416A TR and other electronic components in the JFET category and beyond.

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CMPF4416A www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION: N-CHANNEL JFET The CENTRAL SEMICONDUCTOR CMPF4416A is an epoxy molded N-Channel Silicon Junction Field Effect Transistor manufactured in an SOT-23 case, designed for VHF amplifier and mixer applications. MARKING CODE: 6BG SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 35 V DS Gate-Source Voltage V 35 V GS Gate Current I 10 mA G Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 556 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=20V 1.0 nA GSS GS I V =15V, V=0 5.0 15 mA DSS DS GS BV I=1.0A 35 V GSS G V V =15V, I=1.0nA 2.5 6.0 V GS(off) DS D g V =15V, V =0, f=1.0kHz 4.5 7.5 mS FS DS GS C V =15V, V =0, f=1.0MHz 4.5 pF iss DS GS C V =15V, V =0, f=1.0MHz 1.2 pF rss DS GS N V =15V, V =0, f=1.0kHz, R =1.0M 2.5 dB F DS GS G R6 (6-August 2019)CMPF4416A SURFACE MOUNT SILICON N-CHANNEL JFET SOT-23 CASE - MECHANICAL OUTLINE DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX LEAD CODE: 1) Drain A 0.003 0.007 0.08 0.18 2) Source B 0.006 - 0.15 - 3) Gate C - 0.005 - 0.13 D 0.035 0.044 0.89 1.12 MARKING CODE: 6BG E 0.110 0.120 2.80 3.05 F 0.075 1.90 G 0.037 0.95 H 0.047 0.055 1.19 1.40 I 0.083 0.104 2.10 2.64 J 0.014 0.020 0.35 0.50 SOT-23 (REV: R4) R6 (6-August 2019) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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CENTRAL SEMICONDUCTOR
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