X-On Electronics has gained recognition as a prominent supplier of SML100M12MSF JFET across the USA, India, Europe, Australia, and various other global locations. SML100M12MSF JFET are a product manufactured by TT Electronics. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

SML100M12MSF TT Electronics

SML100M12MSF electronic component of TT Electronics
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See Product Specifications
Part No.SML100M12MSF
Manufacturer: TT Electronics
Category: JFET
Description: JFET 1200V NORMALLY OFF PWR SiC JFET
Datasheet: SML100M12MSF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 226.9704
10 : USD 221.2355
30 : USD 219.9855
60 : USD 216.5545
120 : USD 214.8388
510 : USD 214.8266
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Operating Temperature Range
Product
Brand
Forward Continuous Current
Max Surge Current
Recovery Time
Maximum Diode Capacitance
Maximum Power Dissipation
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Drain-Source Current At Vgs 0
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SML100M12MSF from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SML100M12MSF and other electronic components in the JFET category and beyond.

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NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF RDS(on)max of 0.150 High Temperature Operation Tj = 200C Low Gate Charge and Intrinsic Capacitance Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS UPS SMPS Induction Heating Motor Drive ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) C V Drain-Source Blocking Voltage 1200 V DS R Drain-Source On-resistance 0.15 DS(on)max I Available Drain Current 24 A D I Pulsed Drain Current 34 A DM P Power Dissipation 70 W D V DC Gate-Source Voltage -15 to +3 V GS T Operating Temperature -55 to +200 C J T Storage Temperature -55 to +225 C Jstg THERMAL PROPERTIES Symbols Parameters Min. Typ. Max. Units R Thermal Resistance, Junction To Case, T = 25C 1.8 2.5 C/W JC C Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8965 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) C Symbols Parameters Test Conditions Min. Typ. Max. Units Drain-Source Blocking BV V = 0V, I = 1.0mA 1200 - - V DSS GS D Voltage V = 1200V, V = 0V - - 1.0 DS GS Drain-Source Leakage I mA DSS Current V = 1200V, V = -5V - 0.11 - DS GS V V = 1.0V, I = 34mA Gate Threshold Voltage 0.70 1.00 1.25 V GS(th) DS D V = 2.4V - 0.25 1.5 GS Gate-Source Leakage I mA GSS Current V = -15V - 0.1 1.5 GS I = 13A, V = 3V, T = 25C - 0.09 0.15 D GS J (1) R Drain-Source On-resistance DS(on) I = 13A, V = 3V, T = 175C - 0.29 - D GS J Q Total Gate Charge - 28 - g V = 600V, I = 13A, DS D nC V = 0V to +3V Q GS Gate-Source Charge - 9.3 - gs Turn-on Delay t - 20 - on (Resistive Load) V = 600V, I = 13A, DS D Turn-off Delay ns t - 30 - off C = 33nF, R = 110 (Resistive Load) BP CL t Rise time (Resistive Load) - 70 - r C Input Capacitance - 642 - iss C Output Capacitance - 69 - oss V = 100V pF DS Reverse Transfer C - 68 - rss Capacitance NNNNooootttteeeessss (1) Pulse Width 300us, 2% SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8965 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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