SOD-123 Schottky Barrier Diodes MMSD301T1G, SMMSD301T1G, MMSD701T1G, www.onsemi.com SMMSD701T1G, The MMSD301T1, and MMSD701T1 devices are spinoffs of our popular MMBD301LT1, and MMBD701LT1 SOT23 devices. They are designed for highefficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital SOD123 applications. CASE 425 STYLE 1 Features Extremely Low Minority Carrier Lifetime 1 2 Very Low Capacitance Cathode Anode Low Reverse Leakage AEC Qualified and PPAP Capable MARKING DIAGRAM S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements XXX M These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 Compliant* xx = Specific Device Code MAXIMUM RATINGS XT = MMSD301T1G SMMSD301T1G Rating Symbol Value Unit XH = MMSD701T1G Reverse Voltage V Vdc SMMSD701T1G R MMSD301T1G, SMMSD301T1G 30 M = Date Code MMSD701T1G, SMMSD701T1G 70 = PbFree Package Forward Current (DC) Continous I 200 mA (Note: Microdot may be in either location) F Forward Power Dissipation P mW F T = 25C 225 ORDERING INFORMATION A Junction Temperature T 55 to +125 C Device Package Shipping J Storage Temperature Range T 55 to +150 C MMSD301T1G SOD123 3,000 / stg (PbFree) Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be SMMSD301T1G SOD123 3,000 / assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel MMSD701T1G SOD123 3,000 / (PbFree) Tape & Reel SMMSD701T1G SOD123 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: August, 2020 Rev. 7 MMSD301T1/DMMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G, ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) R MMSD301T1G, SMMSD301T1G 30 MMSD701T1G, SMMSD701T1G 70 Diode Capacitance C pF T (V = 0 V, f = 1.0 MHz) R MMSD301T1G, SMMSD301T1G 0.9 1.5 MMSD701T1G, SMMSD701T1G 0.5 1.0 Total Capacitance C pF T (V = 15 V, f = 1.0 MHz) R MMSD301T1G, SMMSD301T1G 0.9 1.5 (V = 20 V, f = 1.0 MHz) R MMSD701T1G, SMMSD701T1G 0.5 1.0 Reverse Leakage I nAdc R (V = 25 V) R MMSD301T1G, SMMSD301T1G 13 200 (V = 35 V) R MMSD701T1G, SMMSD701T1G 9.0 200 Forward Voltage V Vdc F (I = 1.0 mAdc) F MMSD301T1G, SMMSD301T1G 0.38 0.45 (I = 10 mA) 0.52 0.6 F (I = 1.0 mAdc) F MMSD701T1G, SMMSD701T1G 0.42 0.5 (I = 10 mA) 0.7 1.0 F www.onsemi.com 2