IJW120R100T1 Infineon

SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC 1200 V CoolSiC Power Transistor IJW120R100T1 Final Datasheet Rev. 2.0, <2013-09-11> Power Management & Multimarket 1200 V Silicon Carbide JFET IJW120R100T1 Description CoolSiC is Infineons new family of active power switches based on silicon carbide. Combining the excellent material properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher performance paired with very high ruggedness. The extremely low switching and conduction losses make applications even more efficient, compact, lighter and cooler. Gate Drain Source Features Drain Ultra fast switching Pin 2 Internal fast body diode Low intrinsic capacitance Gate Low gate charge Pin 1 175 C maximum operating temperature Benefits Source Pin 3 Enabling higher system efficiency and/ or higher output power in same housing Enabling higher frequency / increased power density solutions System cost / space savings due to reduced cooling requirements Higher system reliability due to enlarged junction temperatures rates Reduced EMI Applications Solar Inverters High voltage DC/ DC or AC/ DC conversion Bidirectional Inverter Compliant for applications according to climate class IEC 60721-3-4 (4K4H) Table 1 Key Performance Parameters Parameter Value Unit V 1200 V DS R 100 m DS(on) max Q 72 nC G, typ I 78 A D, pulse E 800 V 28 J oss Table 2 Pin Definition Pin 1 Pin 2 Pin 3 Gate Drain Source Type / ordering Code Package Marking Related links 1) IJW120R100T1 PG-TO247-3 120R100T1 www.infineon.com/CoolSiC 1) J-STD20 and JESD22 Final Datasheet 2 Rev. 2.0, <2013-09-11>