Product Technical OrOrdderer Folder Support NowNow InterFET U430-1 U430, U431 N-Channel JFET Features TO-78 Bottom View InterFET N0072L Geometry Source 5 Low Noise: 2 nV/Hz Typical Case Gate 4 6 Low Ciss: 4pF Typical RoHS Compliant Drain 3 7 Drain SMT, TH, and Bare Die Package options. 2 Gate 1 Applications Source Balanced Mixers SOIC8 Top View Differential Amplifiers Gate 1 8 Gate Description Drain 2 7 Source The -25V InterFET U430 and U431 are targeted for balanced mixers and differential amplifier Source 3 6 Drain applications. Gate leakages are typically less than Gate 4 5 Gate 10pA at room temperatures. Custom specifications, matching, and packaging options are available. Product Summary Parameters U430 Min U431 Min Unit BV Gate to Source Breakdown Voltage -25 -25 V GSS I Drain to Source Saturation Current 12 24 mA DSS VGS(off) Gate to Source Cutoff Voltage -1 -2 V GFS Forward Transconductance 10 10 mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging U430 U431 Through-Hole TO-78 Bulk SMPU430 SMPU431 Surface Mount SOIC8 Bulk 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces SMPU430TR SMPU431TR 13 Tape and Reel: Max 2,500 Pieces SOIC8 Tape and Reel U430COT U431COT * Chip Orientated Tray (COT Waffle Pack) COT 70/Waffle Pack U430CFT U431CFT * Chip Face-up Tray (CFT Waffle Pack) CFT 70/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35049.R00Product Technical OrOrdderer Folder Support NowNow InterFET U430-1 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -25 V I Continuous Forward Gate Current 20 mA FG P Continuous Device Power Dissipation 500 mW D P Power Derating 4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) U430 U431 Parameters Conditions Min Typ Max Min Typ Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -25 -25 V Breakdown Voltage Gate to Source V = -15V, V = 0V, T = 25C -150 -150 pA GS DS A IGSS Reverse Current V = -15V, V = 0V, T = 150C -150 -150 nA GS DS A Gate to Source VGS(OFF) VDS = 10V, ID = 1nA -1 -4 -2 -6 V Cutoff Voltage Gate to Source VGS(F) VDS = 0V, IG = 10mA 1 1 V Forward Voltage Drain to Source V = 0V, V = 10V GS DS IDSS 12 30 24 60 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) U430 U431 Parameters Conditions Min Typ Max Min Typ Max Unit Forward V = 10V, I = 10mA, f = 1kHz 10 17 10 17 DS D GFS mS Transconductance V = 10V, I = 10mA, f = 100MHz 12 12 DS D VDS = 10V, ID = 10mA, f = 1kHz 250 250 G Output Conductance S OS VDS = 10V, ID = 10mA, f = 100MHz 0.15 0.15 Drain Gate Cdg VDS = 0V, VGS = -10V, f = 1MHz 5 5 pF Capacitance Source Gate Cgs VDS = 0V, VGS = -10V, f = 1MHz 2.5 2.5 pF Capacitance Noise Voltage VDS = 10V, ID = 10mA, f = 100kHz 10 10 nV/ Hz e n Power Match G V = 10V, I = 10mA, f = 100MHz 12 12 - ig DS D Source Admittance VDS = 20V, VGS = VGS(OFF), G Conversion Gain 3 3 dB c RL = 2k, f = 100MHz Saturation Drain I /I V = 10V, V = 0V 0.9 1 0.9 1 - DSS1 DSS2 DS G Current Ratio V GS(OFF)1 Gate to Source V = 10V, I = 1nA 0.9 1 0.9 1 - DS D V GS(OFF)2 Cutoff Voltage Ratio Transconductance g /g V = 10V, I = 10mA 0.9 1 0.9 1 - fs1 fs2 DS D Ratio U430-1 2 of 4 InterFET Corporation Document Number: IF35049.R00 www.InterFET.com June, 2019