Product Technical OrOrdderer Folder Support NowNow InterFET 2N4856-7-8A 2N4856/A, 2N4857/A, 2N4858/A N-Channel JFET Features TO-18 Bottom View InterFET N0132S Geometry Gate/Case 3 Low Noise: 1.2 nV/Hz Typical Fast Switching Drain 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Choppers SOT23 Top View Commutators Analog Switches Source 1 Gate Description 3 The -40V InterFET 2N4856/A, 2N4857/A, and Drain 2 2N4858/A JFETs are targeted for very low noise switching applications for mid to high frequency designs. Gate leakages are typically 50pA at room TO-92 Bottom View temperatures. The TO-18 package is hermetically sealed and suitable for military applications. Gate 3 Drain 2 Source 1 Product Summary Parameters 2N4856/A Min 2N4857/A Min 2N4858/A Min Unit BV Gate to Source Breakdown Voltage -40 -40 -40 V GSS IDSS Drain to Source Saturation Current 50 20 8 mA VGS(off) Gate to Source Cutoff Voltage -4 -2 -0.8 V Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N4856 2N4857 2N4858 2N4856A 2N4857A 2N4858A Through-Hole TO-18 Bulk PN4856 PN4857 PN4858 PN4856A PN4857A PN4858A Through-Hole TO-92 Bulk SMP4856 SMP4857 SMP4858 SMP4856A SMP4857A SMP4858A Surface Mount SOT23 Bulk SMP4856TR SMP4857TR SMP4858TR 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP4856ATR SMP4857ATR SMP4858ATR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N4856COT 2N4857COT 2N4858COT Chip Orientated Tray 2N4856ACOT 2N4857ACOT 2N4858ACOT (COT Waffle Pack) COT 400/Waffle Pack 2N4856CFT 2N4857CFT 2N4858CFT Chip Face-up Tray 2N4856ACFT 2N4857ACFT 2N4858ACFT (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35061.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N4856-7-8A Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -40 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 1800 mW D P Power Derating 10 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified, Highlighted values = A variant) 2N4856/A 2N4857/A 2N4858/A Parameters Conditions Min Max Min Max Min Max Unit Gate to Source V(BR)GSS IG = -1A,VDS = 0V -40 -40 -40 V Breakdown Voltage Gate to Source V = -20V, V = 0V, T = 25C -250 -200 -200 pA GS DS A IGSS Reverse Current V = -20V, V = 0V, T = 150C -500 -500 -500 nA GS DS A Gate to Source VGS(OFF) VDS = 15V, ID = 0.5nA -4 -10 -2 -6 -0.8 -4 V Cutoff Voltage Drain to Source V = 15V, V = 0V DS GS IDSS 50 20 100 8 80 mA Saturation Current (Pulsed) V = 15V, V = -10V, T = 25C 250 250 250 pA DS GS A ID(OFF) Drain Cutoff Current V = 15V, V = -10V, T = 150C 500 500 500 nA DS GS A Drain to Source 0.75 0.5 0.5 V VDS(ON) VGS = 0V, ID = ( ) ON Voltage (20) (10) (5) mA Dynamic Characteristics ( TA = 25C, Unless otherwise specified, Highlighted values = A variant) 2N4856/A 2N4857/A 2N4858/A Parameters Conditions Min Max Min Max Min Max Unit Drain to Source VGS = 0V, ID = 0A, RDS(ON) 25 40 60 ON Resistance f = 1kHz V = 0V, V = -10V, 18 18 18 DS GS C Input Capacitance pF iss f = 1MHz 10 10 10 Reverse Transfer 8 8 8 VDS = 0V, VGS = -10V, Crss pF Capacitance f = 1MHz 4 3.5 3.5 6 6 10 ns VDD = 10V, VGS(ON) = 0V 5 6 8 t Turn-On Delay Time d(on) ID(ON) = ( ), VGS(OFF) = (20) (10) (5) (mA) -10 -6 -4 V 3 4 10 ns V = 10V, V = 0V 3 4 8 DD GS(ON) tr Rise Time I = ( ), V = D(ON) GS(OFF) (20) (10) (5) (mA) -10 -6 -4 V 25 50 100 ns VDD = 10V, VGS(ON) = 0V 25 40 80 t Turn-Off Delay Time d(off) ID(ON) = ( ), VGS(OFF) = (20) (10) (5) (mA) -10 -6 -4 V 2N4856-7-8A 2 of 5 InterFET Corporation Document Number: IF35061.R00 www.InterFET.com December, 2018