Product Technical OrOrdderer Folder Support NowNow InterFET IFN5564-5-6 IFN5564, IFN5565, IFN5566 Dual Matched N-Channel JFET Features TO-71 Bottom View Source InterFET N0072S Geometry 5 Drain Low Noise: 2.5 nV/Hz Typical 6 Low Leakage: 10 pA Typical Gate 3 7 Gate Low Input Capacitance: 6.5 pF Typical RoHS Compliant 2 Drain SMT, TH, and Bare Die Package options. 1 Source Applications SOIC8 Top View Wide Band Differential Amplifier Commutators Gate 1 8 Gate Drain 2 7 Source Description The -40V InterFET IFN5564, IFN5565, and IFN5566 Source 3 6 Drain JFETs are targeted for wide bandwith differential Gate 4 5 Gate amplifiers and commutators. Gate leakages are less than 10pA at room temperatures. The IFN5564 is matched down to 5mV. The TO-71 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Product Summary Parameters IFN5564 Min IFN5565 Min IFN5566 Min Unit BV Gate to Source Breakdown Voltage -40 -40 -40 V GSS I Drain to Source Saturation Current 5 5 5 mA DSS VGS(off) Gate to Source Cutoff Voltage -0.5 -0.5 -0.5 V GFS Forward Transconductance 7000 7000 7000 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN5564 IFN5565 IFN5566 Through-Hole TO-71 Bulk SMP5564 SMP5565 SMP5566 Through-Hole SOIC8 Bulk SMP5564TR SMP5565TR 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces SMP5566TR 13 Tape and Reel: Max 2,500 Pieces SOIC8 Tape and Reel IFN5564COT IFN5565COT IFN5566COT * Chip Orientated Tray (COT Waffle Pack) COT 70/Waffle Pack IFN5564CFT IFN5565CFT IFN5566CFT * Chip Face-up Tray (CFT Waffle Pack) CFT 70/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35051.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN5564-5-6 Electrical Characteristics Maximum Ratings ( T = 25C, Unless otherwise specified) A Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -40 V IFG Continuous Forward Gate Current 50 mA PD Continuous Device Power Dissipation 650 mW P Power Derating 3.3 mW/C T Operating Junction Temperature -55 to 150 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN5564, IFN5565, IFN5566 Parameters Conditions Min Max Unit Gate to Source Breakdown V(BR)GSS IG = -1A,VDS = 0V -40 V Voltage Gate to Source V = -20V, V = 0V, T = 25C -100 pA GS DS A IGSS Reverse Current V = -20V, V = 0V, T = 150C -200 nA GS DS A Gate to Source VGS(OFF) VDS = 15V, ID = 1nA -0.5 -3 V Cutoff Voltage VGS(F) Gate Source Forward Voltage VDS = 0V, IG = 2mA 1 V Drain to Source V = 15V, V = 0V DS GS IDSS 5 30 mA Saturation Current (Pulsed) Static Drain to Source RDS(ON) VGS = 0V, ID = 1mA 100 ON Resistance Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFN5564, IFN5565, IFN5566 Parameters Conditions Min Max Unit VDS = 15V, ID = 2mA, f = 1kHz 7000 G Forward Transconductance 12500 hmo FS VDS = 15V, ID = 2mA, f = 100MHz 7000 G Output Conductance V = 15V, I = 2mA f = 1kHz 45 hmo OS DS D C Input Capacitance V = 15V, I = 2mA, f = 1MHz 12 pF iss DS D C Reverse Capacitance V = 15V, I = 2mA, f = 1MHz 3 pF rss DS D VDS = 15V, ID = 2mA, f = 10Hz, NF Noise Figure 1 dB RG = 1M Equivalent Circuit V = 15V, I = 2mA, f = 10Hz 50 DS D nV/ Hz e n Input Noise Voltage Saturation Drain Current VDS = 15V, VGS = 0V I /I 0.95 1 - DSS1 DSS2 Ratio (Pulsed) IFN5564 5 Differential Gate Source V V GS1 GS2 VDS = 15V, ID = 2mA IFN5565 10 mV Voltage IFN5566 20 V = 15V, I = 2mA IFN5564 0.8 1 DS D V V Differential Gate Source GS1 GS2 T = 25C to -55C 0.8,2,4 IFN5565 2 2.5 mV/C A T Voltage with Temperature TA = 25C to 125C 1,2.5,5 IFN5566 4 5 IFN5564 0.95 1 g /g Transconductance Ratio IFN5565 0.9 1 - fs1 fs2 VDS = 15V, ID = 2mA IFN5566 0.9 1 IFN5564-5-6 2 of 4 InterFET Corporation Document Number: IF35051.R00 www.InterFET.com December, 2018