X-On Electronics has gained recognition as a prominent supplier of IFN5566 JFET across the USA, India, Europe, Australia, and various other global locations. IFN5566 JFET are a product manufactured by InterFET. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

IFN5566 InterFET

IFN5566 electronic component of InterFET
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Part No.IFN5566
Manufacturer: InterFET
Category: JFET
Description: JFET N-Ch Dual JFET -40V 50mA 650mW 3.3mW
Datasheet: IFN5566 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 25.0125 ea
Line Total: USD 25.01 
Availability - 267
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
267
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 25.0125
10 : USD 22.471
25 : USD 21.4705
50 : USD 20.4585
100 : USD 20.102
250 : USD 20.0445
500 : USD 18.561

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Type
Brand
Drain-Source Current At Vgs 0
Forward Transconductance - Min
Gate-Source Cutoff Voltage
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IFN5566 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IFN5566 and other electronic components in the JFET category and beyond.

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Product Technical OrOrdderer Folder Support NowNow InterFET IFN5564-5-6 IFN5564, IFN5565, IFN5566 Dual Matched N-Channel JFET Features TO-71 Bottom View Source InterFET N0072S Geometry 5 Drain Low Noise: 2.5 nV/Hz Typical 6 Low Leakage: 10 pA Typical Gate 3 7 Gate Low Input Capacitance: 6.5 pF Typical RoHS Compliant 2 Drain SMT, TH, and Bare Die Package options. 1 Source Applications SOIC8 Top View Wide Band Differential Amplifier Commutators Gate 1 8 Gate Drain 2 7 Source Description The -40V InterFET IFN5564, IFN5565, and IFN5566 Source 3 6 Drain JFETs are targeted for wide bandwith differential Gate 4 5 Gate amplifiers and commutators. Gate leakages are less than 10pA at room temperatures. The IFN5564 is matched down to 5mV. The TO-71 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Product Summary Parameters IFN5564 Min IFN5565 Min IFN5566 Min Unit BV Gate to Source Breakdown Voltage -40 -40 -40 V GSS I Drain to Source Saturation Current 5 5 5 mA DSS VGS(off) Gate to Source Cutoff Voltage -0.5 -0.5 -0.5 V GFS Forward Transconductance 7000 7000 7000 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN5564 IFN5565 IFN5566 Through-Hole TO-71 Bulk SMP5564 SMP5565 SMP5566 Through-Hole SOIC8 Bulk SMP5564TR SMP5565TR 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces SMP5566TR 13 Tape and Reel: Max 2,500 Pieces SOIC8 Tape and Reel IFN5564COT IFN5565COT IFN5566COT * Chip Orientated Tray (COT Waffle Pack) COT 70/Waffle Pack IFN5564CFT IFN5565CFT IFN5566CFT * Chip Face-up Tray (CFT Waffle Pack) CFT 70/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35051.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN5564-5-6 Electrical Characteristics Maximum Ratings ( T = 25C, Unless otherwise specified) A Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -40 V IFG Continuous Forward Gate Current 50 mA PD Continuous Device Power Dissipation 650 mW P Power Derating 3.3 mW/C T Operating Junction Temperature -55 to 150 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN5564, IFN5565, IFN5566 Parameters Conditions Min Max Unit Gate to Source Breakdown V(BR)GSS IG = -1A,VDS = 0V -40 V Voltage Gate to Source V = -20V, V = 0V, T = 25C -100 pA GS DS A IGSS Reverse Current V = -20V, V = 0V, T = 150C -200 nA GS DS A Gate to Source VGS(OFF) VDS = 15V, ID = 1nA -0.5 -3 V Cutoff Voltage VGS(F) Gate Source Forward Voltage VDS = 0V, IG = 2mA 1 V Drain to Source V = 15V, V = 0V DS GS IDSS 5 30 mA Saturation Current (Pulsed) Static Drain to Source RDS(ON) VGS = 0V, ID = 1mA 100 ON Resistance Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFN5564, IFN5565, IFN5566 Parameters Conditions Min Max Unit VDS = 15V, ID = 2mA, f = 1kHz 7000 G Forward Transconductance 12500 hmo FS VDS = 15V, ID = 2mA, f = 100MHz 7000 G Output Conductance V = 15V, I = 2mA f = 1kHz 45 hmo OS DS D C Input Capacitance V = 15V, I = 2mA, f = 1MHz 12 pF iss DS D C Reverse Capacitance V = 15V, I = 2mA, f = 1MHz 3 pF rss DS D VDS = 15V, ID = 2mA, f = 10Hz, NF Noise Figure 1 dB RG = 1M Equivalent Circuit V = 15V, I = 2mA, f = 10Hz 50 DS D nV/ Hz e n Input Noise Voltage Saturation Drain Current VDS = 15V, VGS = 0V I /I 0.95 1 - DSS1 DSS2 Ratio (Pulsed) IFN5564 5 Differential Gate Source V V GS1 GS2 VDS = 15V, ID = 2mA IFN5565 10 mV Voltage IFN5566 20 V = 15V, I = 2mA IFN5564 0.8 1 DS D V V Differential Gate Source GS1 GS2 T = 25C to -55C 0.8,2,4 IFN5565 2 2.5 mV/C A T Voltage with Temperature TA = 25C to 125C 1,2.5,5 IFN5566 4 5 IFN5564 0.95 1 g /g Transconductance Ratio IFN5565 0.9 1 - fs1 fs2 VDS = 15V, ID = 2mA IFN5566 0.9 1 IFN5564-5-6 2 of 4 InterFET Corporation Document Number: IF35051.R00 www.InterFET.com December, 2018

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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