Product Technical OrOrdderer Folder Support NowNow InterFET IFN5911-2 IFN5911, IFN5912 Dual Matched N-Channel JFET Features TO-78 Bottom View Source InterFET N0030L Geometry 5 Drain Case Low Noise: 4.0 nV/Hz Typical 6 Low Leakage: 10pA Typical Gate 3 7 Gate Low Input Capacitance: 5.0 pF Typical RoHS Compliant 2 Drain SMT, TH, and Bare Die Package options. 1 Source Applications SOIC8 Top View VHF Amplifiers Wideband Differential Amplifiers Gate 1 8 Gate Drain 2 7 Source Description Source 3 6 Drain The -25V InterFET IFN5911 and IFN 5912 JFETs Gate 4 5 Gate are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Product Summary Parameters IFN5911 Min IFN5912 Min Unit BV Gate to Source Breakdown Voltage -25 -25 V GSS I Drain to Source Saturation Current 7 7 mA DSS VGS(off) Gate to Source Cutoff Voltage -1 -1 V GFS Forward Transconductance 3000 3000 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN5911 IFN5912 Through-Hole TO-78 Bulk SMP5911 SMP5912 Surface Mount SOIC8 Bulk SMP5911 SMP5912 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces 13 Tape and Reel: Max 2,500 Pieces SOIC8 Tape and Reel IFN5911COT IFN5912COT * Chip Orientated Tray (COT Waffle Pack) COT 70/Waffle Pack IFN5911CFT IFN5912CFT * Chip Face-up Tray (CFT Waffle Pack) CFT 70/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35035.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN5911-2 Electrical Characteristics Maximum Ratings ( T = 25C, Unless otherwise specified) A Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -50 V IFG Continuous Forward Gate Current 50 mA PD Continuous Device Power Dissipation 250 mW P Power Derating 4.3 mW/C T Operating Junction Temperature -55 to 150 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN5911 IFN5912 Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS IG = -1A,VDS = 0V -25 -25 V Breakdown Voltage Gate to Source V = -15V, V = 0V, T = 25C -100 -100 pA GS DS A IGSS Reverse Current V = -15V, V = 0V, T = 150C -250 -250 nA GS DS A V = 10V, I = 5mA, T = 25C -100 -100 pA DG D A IG Gate Operating Current V = 10V, I = 5mA, T = 125C -100 -100 nA DG D A Gate to Source VGS(OFF) VDS = 10V, ID = 1nA -1 -5 -1 -5 V Cutoff Voltage VGS Gate Source Voltage VDS = 10V, ID = 5mA -0.3 -4 -0.3 -4 V Drain to Source V = 10V, V = 0V DS GS IDSS 7 40 7 40 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFN5911 IFN5912 Parameters Conditions Min Max Min Max Unit Forward VDS = 10V, ID = 5mA, f = 1kHz 3000 10000 3000 10000 G S FS Transconductance VDS = 10V, ID = 5mA, f = 100MHz 3000 10000 3000 10000 VDS = 10V, ID = 5mA, f = 1kHz 100 100 G Output Conductance S OS VDS = 10V, ID = 5mA, f = 100MHz 150 150 C Input Capacitance V = 10V, I = 5mA, f = 1MHz 5 5 pF iss DS D C Reverse Capacitance V = 10V, I = 5mA, f = 1MHz 1.2 1.2 pF rss DS D VDS = 10V, ID = 5mA, f = 10Hz, NF Noise Figure 1 1 dB RG = 100K Equivalent Circuit V = 10V, I = 5mA, f = 10kHz 20 20 DS D nV/ Hz e n Input Noise Voltage Differential Gate V = 10V, I = 5mA, T = 125C 20 20 nA I I DS D A G1 G2 Current Saturation Drain I /I V = 10V, V = 0V 0.95 1 0.95 1 - DSS1 DSS2 DS GS Current Ratio Differential Gate V V V = 10V, I = 5mA 10 15 mV GS1 GS2 DS D Source Voltage Differential Gate VDS = 10V, ID = 5mA, V V GS1 GS2 Source Voltage with TA = -55C, TB = 25C 2.5 5 mV/C T Temperature TA = 25C, TB = 125C 2 4 Transconductance g /g V = 10V, I = 5mA 0.95 1 0.95 1 - fs1 fs2 DS D Ratio IFN5911-2 2 of 7 InterFET Corporation Document Number: IF35035.R00 www.InterFET.com December, 2018