X-On Electronics has gained recognition as a prominent supplier of IFN5911 JFET across the USA, India, Europe, Australia, and various other global locations. IFN5911 JFET are a product manufactured by InterFET. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

IFN5911 InterFET

IFN5911 electronic component of InterFET
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See Product Specifications
Part No.IFN5911
Manufacturer: InterFET
Category: JFET
Description: JFET Dual N-Ch JFET -25V 50mA 500mW 4mW
Datasheet: IFN5911 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 36.3975 ea
Line Total: USD 36.4 
Availability - 60
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
60
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 36.3975
10 : USD 32.89
25 : USD 31.0155
50 : USD 30.0495
100 : USD 29.5665
250 : USD 27.5885
500 : USD 27.1285
1000 : USD 26.496

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Series
Type
Brand
Drain-Source Current At Vgs 0
Forward Transconductance - Min
Gate-Source Cutoff Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IFN5911 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IFN5911 and other electronic components in the JFET category and beyond.

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Product Technical OrOrdderer Folder Support NowNow InterFET IFN5911-2 IFN5911, IFN5912 Dual Matched N-Channel JFET Features TO-78 Bottom View Source InterFET N0030L Geometry 5 Drain Case Low Noise: 4.0 nV/Hz Typical 6 Low Leakage: 10pA Typical Gate 3 7 Gate Low Input Capacitance: 5.0 pF Typical RoHS Compliant 2 Drain SMT, TH, and Bare Die Package options. 1 Source Applications SOIC8 Top View VHF Amplifiers Wideband Differential Amplifiers Gate 1 8 Gate Drain 2 7 Source Description Source 3 6 Drain The -25V InterFET IFN5911 and IFN 5912 JFETs Gate 4 5 Gate are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Product Summary Parameters IFN5911 Min IFN5912 Min Unit BV Gate to Source Breakdown Voltage -25 -25 V GSS I Drain to Source Saturation Current 7 7 mA DSS VGS(off) Gate to Source Cutoff Voltage -1 -1 V GFS Forward Transconductance 3000 3000 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN5911 IFN5912 Through-Hole TO-78 Bulk SMP5911 SMP5912 Surface Mount SOIC8 Bulk SMP5911 SMP5912 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces 13 Tape and Reel: Max 2,500 Pieces SOIC8 Tape and Reel IFN5911COT IFN5912COT * Chip Orientated Tray (COT Waffle Pack) COT 70/Waffle Pack IFN5911CFT IFN5912CFT * Chip Face-up Tray (CFT Waffle Pack) CFT 70/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35035.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN5911-2 Electrical Characteristics Maximum Ratings ( T = 25C, Unless otherwise specified) A Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -50 V IFG Continuous Forward Gate Current 50 mA PD Continuous Device Power Dissipation 250 mW P Power Derating 4.3 mW/C T Operating Junction Temperature -55 to 150 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN5911 IFN5912 Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS IG = -1A,VDS = 0V -25 -25 V Breakdown Voltage Gate to Source V = -15V, V = 0V, T = 25C -100 -100 pA GS DS A IGSS Reverse Current V = -15V, V = 0V, T = 150C -250 -250 nA GS DS A V = 10V, I = 5mA, T = 25C -100 -100 pA DG D A IG Gate Operating Current V = 10V, I = 5mA, T = 125C -100 -100 nA DG D A Gate to Source VGS(OFF) VDS = 10V, ID = 1nA -1 -5 -1 -5 V Cutoff Voltage VGS Gate Source Voltage VDS = 10V, ID = 5mA -0.3 -4 -0.3 -4 V Drain to Source V = 10V, V = 0V DS GS IDSS 7 40 7 40 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFN5911 IFN5912 Parameters Conditions Min Max Min Max Unit Forward VDS = 10V, ID = 5mA, f = 1kHz 3000 10000 3000 10000 G S FS Transconductance VDS = 10V, ID = 5mA, f = 100MHz 3000 10000 3000 10000 VDS = 10V, ID = 5mA, f = 1kHz 100 100 G Output Conductance S OS VDS = 10V, ID = 5mA, f = 100MHz 150 150 C Input Capacitance V = 10V, I = 5mA, f = 1MHz 5 5 pF iss DS D C Reverse Capacitance V = 10V, I = 5mA, f = 1MHz 1.2 1.2 pF rss DS D VDS = 10V, ID = 5mA, f = 10Hz, NF Noise Figure 1 1 dB RG = 100K Equivalent Circuit V = 10V, I = 5mA, f = 10kHz 20 20 DS D nV/ Hz e n Input Noise Voltage Differential Gate V = 10V, I = 5mA, T = 125C 20 20 nA I I DS D A G1 G2 Current Saturation Drain I /I V = 10V, V = 0V 0.95 1 0.95 1 - DSS1 DSS2 DS GS Current Ratio Differential Gate V V V = 10V, I = 5mA 10 15 mV GS1 GS2 DS D Source Voltage Differential Gate VDS = 10V, ID = 5mA, V V GS1 GS2 Source Voltage with TA = -55C, TB = 25C 2.5 5 mV/C T Temperature TA = 25C, TB = 125C 2 4 Transconductance g /g V = 10V, I = 5mA 0.95 1 0.95 1 - fs1 fs2 DS D Ratio IFN5911-2 2 of 7 InterFET Corporation Document Number: IF35035.R00 www.InterFET.com December, 2018

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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