Product Technical OrOrdderer Folder Support NowNow InterFET 2N3970-1-2 2N3970, 2N3971, 2N3972 N-Channel JFET Features TO-18 Bottom View InterFET N0132S Geometry Gate/Case 3 Low Noise: 1.2 nV/Hz Typical Fast Switching Drain 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Low RDS(ON) SOT23 Top View Low Leakage Fast Switching Source 1 Gate Description 3 The -40V InterFET 2N3970, 2N3971, and 2N3972 Drain 2 JFETs are targeted for very low noise switching applications for mid to high frequency designs. Gate leakages are typically 50pA at room TO-92 Bottom View temperatures. The 2N3972 has a cutoff voltage of less than 3.0V ideal for low-level power supplies. The TO-18 package is hermetically sealed and Gate 3 suitable for military applications. Drain 2 Source 1 Product Summary Parameters 2N3970 Min 2N3971 Min 2N3972 Min Unit BV Gate to Source Breakdown Voltage -40 -40 -40 V GSS IDSS Drain to Source Saturation Current 50 25 5 mA VGS(off) Gate to Source Cutoff Voltage -4 -2 -0.5 V Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N3970 2N3971 2N3972 Through-Hole TO-18 Bulk PN3970 PN3971 PN3972 Through-Hole TO-92 Bulk SMP3970 SMP3971 SMP3972 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP3970TR SMP3971TR SMP3972TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel Chip Orientated Tray 2N3970COT 2N3971COT 2N3972COT (COT Waffle Pack) COT 400/Waffle Pack Chip Face-up Tray 2N3970CFT 2N3971CFT 2N3972CFT (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35058.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N3970-1-2 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -40 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 1.7 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N3970 2N3971 2N3972 Parameters Conditions Min Max Min Max Min Max Unit Gate to Source V(BR)GSS IG = -1A,VDS = 0V -40 -40 -40 V Breakdown Voltage Gate to Source IGSS VGS = -20V, VDS = 0V -1 -1 -1 nA Reverse Current Gate to Source VGS(OFF) VDS = 20V, ID = 1nA -4 -10 -2 -5 -0.5 -3 V Cutoff Voltage Drain to Source V = 20V, V = 0V DS GS IDSS 50 150 25 75 5 30 mA Saturation Current (Pulsed) V = 20V, V = -12V, T = 25C 250 250 250 pA DS GS A ID(OFF) Drain Cutoff Current V = 20V, V = -12V, T = 150C 500 500 500 nA DS GS A V = 20V, I = 0A, T = 25C 250 250 250 pA DG S A IDG Drain Reverse Current V = 20V, I = 0A, T = 150C 500 500 500 nA DG S A Drain to Source 1 1.5 2 V VDS(ON) VGS = 0V, ID = ( ) ON Voltage (20) (10) (5) mA Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N3970 2N3971 2N3972 Parameters Conditions Min Max Min Max Min Max Unit Drain to Source VGS = 0V, ID = 0A, RDS(ON) 30 60 100 ON Resistance f = 1kHz VDS = -20V, VGS = 0V, C Input Capacitance 25 25 25 pF iss f = 1MHz Reverse Transfer VDS = 0V, VGS = -12V, C 6 6 6 pF rss Capacitance f = 1MHz td Turn-On Delay Time VDD = 10V, VGS(ON) = 0V 10 15 40 nS tr Rise Time VDD = 10V, VGS(ON) = 0V 10 15 40 nS t Turn-Off Time V = 10V,V = 0V 30 60 100 nS off DD GS(ON) 2N3970-1-2 2 of 5 InterFET Corporation Document Number: IF35058.R00 www.InterFET.com December, 2018