X-On Electronics has gained recognition as a prominent supplier of J112_D74Z JFET across the USA, India, Europe, Australia, and various other global locations. J112_D74Z JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

J112_D74Z ON Semiconductor

J112_D74Z electronic component of ON Semiconductor
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See Product Specifications
Part No.J112_D74Z
Manufacturer: ON Semiconductor
Category: JFET
Description: JFET N-Channel Switch
Datasheet: J112_D74Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2521 ea
Line Total: USD 1.25 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 0.1749
4000 : USD 0.1743
6000 : USD 0.1727
10000 : USD 0.1709
20000 : USD 0.1692
24000 : USD 0.1676
30000 : USD 0.1659
50000 : USD 0.1642
100000 : USD 0.1625

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 8000
Multiples : 8000
8000 : USD 0.1195

0
Ship by Fri. 27 Dec to Thu. 02 Jan

Multiples : 8000

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2521
10 : USD 0.8572
100 : USD 0.181
500 : USD 0.1609
1000 : USD 0.1252
2000 : USD 0.106
4000 : USD 0.1021
10000 : USD 0.0963
24000 : USD 0.0877

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 0.1753

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Series
Operating Temperature Range
Type
Brand
Drain-Source Current At Vgs 0
Gate-Source Cutoff Voltage
Factory Pack Quantity :
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We are delighted to provide the J112_D74Z from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the J112_D74Z and other electronic components in the JFET category and beyond.

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N-Channel Switch J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 Features www.onsemi.com This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers Sourced from Process 51 Source & Drain are Interchangeable These are PbFree Devices D S G ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A TO92 3 4.83x4.76 LEADFORMED (Note 1, 2) CASE 135AR Symbol Parameter Value Unit V DrainGate Voltage 35 V DG V GateSource Voltage 35 V GS I Forward Gate Current 50 mA GF D S G T , T Operating and Storage Junction 55 to 150 C J STG Temperature Range TO92 3 4.825x4.76 CASE 135AN Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be G assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady state limits. ON Semiconductor should be consulted on S applications involving pulsed or lowdutycycle operations. D SOT23 (TO236) THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) CASE 31808 A Max G MMBFJ111 / J111 / J112 / MMBFJ112 / S J113 MMBFJ113 D (Note 3) (Note 4) Symbol Parameter Unit SOT23 P Total Device Dissipation 625 350 mW D CASE 318BM Derate Above 25 C 5.0 2.8 mW/C MARKING DIAGRAMS R Thermal Resistance, 125 C/W JC JunctiontoCase AX R Thermal Resistance, 200 357 C/W JA XXX JunctiontoAmbient XXM YWW 3. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) 1 with minimum land pattern size. 4. Device mounted on FR4 PCB 36 mm x 18 mm x 1.5 mm mounting pad for 2 the collector lead minimum 6 cm . XXXX, XX = Specific Device Code A = Assembly Plant Code Y = Year WW = Work Week M = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: April, 2021 Rev. 4 MMBFJ113/DJ111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS V GateSource Breakdown Voltage I = 1.0 A, V = 0 35 V (BR)GSS G DS I Gate Reverse Current V = 15 V, V = 0 1.0 nA GSS GS DS V (off) GateSource CutOff Voltage V = 5 V, I = 1.0 A 111 3.0 10.0 V GS DS D 112 1.0 5.0 113 0.5 3.0 I (off) Drain Cutoff Leakage Current V = 5.0 V, V = 10 V 1.0 nA D DS GS ON CHARACTERISTICS I ZeroGate Voltage Drain Current (Note 5) V = 15 V, V = 0 111 20 mA DSS DS GS 112 5.0 113 2.0 r (on) DrainSource On Resistance V 0.1 V, V = 0 111 30 DS DS GS 112 50 113 100 SMALL SIGNAL CHARACTERISTICS C (on) DrainGate &SourceGate On Capacitance V = 0, V = 0, f = 1.0 MHz 28 pF dg DS GS C (on) sg C (off) DrainGate Off Capacitance V = 0, V = 10 V, f = 1.0 MHz 5.0 pF dg DS GS C (off) SourceGate Off Capacitance V = 0, V = 10 V, f = 1.0 MHz 5.0 pF sg DS GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse test: pulse width 300 s, duty cycle 2%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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