X-On Electronics has gained recognition as a prominent supplier of J175"D26Z JFET across the USA, India, Europe, Australia, and various other global locations. J175"D26Z JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

J175"D26Z ON Semiconductor

J175"D26Z electronic component of ON Semiconductor
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See Product Specifications
Part No. J175"D26Z
Manufacturer: ON Semiconductor
Category: JFET
Description: TRANSISTOR, JFET, 30V, -60mA, TO-92-3
Datasheet: J175"D26Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
129: USD 0.5054 ea
Line Total: USD 65.2 
Availability - 288
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ: 129  Multiples: 1
Pack Size: 1
Availability Price Quantity
2089
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ : 1
Multiples : 1
1 : USD 0.5808
10 : USD 0.4545
30 : USD 0.4011
100 : USD 0.2876
500 : USD 0.2345
1000 : USD 0.2212

1938
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 234
Multiples : 1
234 : USD 0.2778

1940
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 2000
Multiples : 2000
2000 : USD 0.1991
4000 : USD 0.196
6000 : USD 0.1911
8000 : USD 0.1884
26000 : USD 0.184

288
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 129
Multiples : 1
129 : USD 0.5054
447 : USD 0.1454

4319
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 78
Multiples : 1
78 : USD 0.8305
100 : USD 0.8278
250 : USD 0.8251
500 : USD 0.7909
1000 : USD 0.7884
3000 : USD 0.7857

26326
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 2841
Multiples : 1
2841 : USD 0.165

91147
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 2841
Multiples : 1
2841 : USD 0.165

   
Manufacturer
Product Category
Brand
Breakdown Voltage Vbr
Zero Gate Voltage Drain Current Idss Min
Zero Gate Voltage Drain Current Idss Max
Gate-Source Cutoff Voltage Vgsoff Max
Transistor Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the J175"D26Z from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the J175"D26Z and other electronic components in the JFET category and beyond.

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J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch February 2014 J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. G S SOT-23 TO-92 D Mark: 6W / 6X / 6Y DGS Note: Source & drain are interchangeable. Figure 1. J175 / J176 Device Package Figure 2. MMBFJ175 / 176 / 177 Device Package Ordering Information Part Number Marking Package Packing Method J175 D26Z J175 TO-92 3L Tape and Reel J176 D74Z J176 TO-92 3L Ammo MMBFJ175 6W SOT-23 3L Tape and Reel MMBFJ176 6X SOT-23 3L Tape and Reel MMBFJ177 6Y SOT-23 3L Tape and Reel 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.1.1 1 J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch (1),(2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The = 25C unless otherwise noted. absolute maximum ratings are stress ratings only. Values are at T A Symbol Parameter Value Unit V Drain-Gate Voltage -30 V DG V Gate-Source Voltage 30 V GS I Forward Gate Current 50 mA GF T , T Operating and Storage Junction Temperature Range -55 to + 150 C J STG Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. (3) Thermal Characteristics Values are at T = 25C unless otherwise noted. A Max. MMBFJ175 / Symbol Parameter Unit J175 / J176 MMBFJ176 / MMBFJ177 Total Device Dissipation 350 225 mW P D Derate Above 25C2.81.8mW/C R Thermal Resistance, Junction to Case 125 C/W JC R Thermal Resistance, Junction to Ambient 357 556 C/W JA Note: 3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 3. PCB size: FR-4 76 x 114 x 1.57 mm 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.1.1 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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