Semiconductors catalog
BF862.215 is a Dual N-Channel Enhancement Mode Field Effect Transistor, manufactured by NXP Semiconductors. It is an ideal device for applications that require high switching performance, low noise and low capacitance such as RF power amplifiers, multi-band amplifiers, taps and general purpose switching applications. The transistor is available in the TO-72 style surface-mount package. The device has a low gate-source capacitance of <100pF and has an integrated shunt resistor to protect the gate against too large gate voltages. The on-state drain current is specified up to 8A, while the maximum drain/source voltage is 45V. This device is also RoHS compliant, making it suitable for use in a wide range of environments.