X-On Electronics has gained recognition as a prominent supplier of BF862.215 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF862.215 RF JFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

BF862.215 NXP

BF862.215 electronic component of NXP
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Part No.BF862.215
Manufacturer: NXP
Category: RF JFET Transistors
Description: Transistor: N-JFET; unipolar; 20V; 25mA; 300mW; SOT23
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4075 ea
Line Total: USD 0.41 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4075
10 : USD 0.2174
130 : USD 0.2041

   
Manufacturer
Product Category
Transistor Type
Vds - Drain-Source Breakdown Voltage
Pd - Power Dissipation
Polarisation
Drain Current
Case
Mounting
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BF862.215 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF862.215 and other electronic components in the RF JFET Transistors category and beyond.

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Semiconductors catalog BF862.215 is a Dual N-Channel Enhancement Mode Field Effect Transistor, manufactured by NXP Semiconductors. It is an ideal device for applications that require high switching performance, low noise and low capacitance such as RF power amplifiers, multi-band amplifiers, taps and general purpose switching applications. The transistor is available in the TO-72 style surface-mount package. The device has a low gate-source capacitance of <100pF and has an integrated shunt resistor to protect the gate against too large gate voltages. The on-state drain current is specified up to 8A, while the maximum drain/source voltage is 45V. This device is also RoHS compliant, making it suitable for use in a wide range of environments.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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