CE3521M4 CEL

RF Low Noise FET CE3521M4 20 GHz Low Noise FET in Dual Mold Plastic PKG Enter a Short Document/Title Name Here DESCRIPTION PACKAGE Low Noise and High Gain Flat-lead 4-pin thin-type super minimold package Original Dual Mold Plastic package FEATURES Low noise figure and high associated gain: NF = 0.70 dB TYP., Ga = 11.9 dB TYP. V = 2 V, I = 10 mA, f = 20 GHz DS D APPLICATIONS DBS LNB gain-stage, Mix-stage Low noise amplifier for microwave communication systems ORDERING INFORMATION Part Number Order Number Package Marking Description CE3521M4 CE3521M4-C2 Flat-lead 4-pin C04 Embossed tape 8 mm wide thin-type super Pin 1 (source), Pin 2 (drain) minimold face the perforation side of package the tape MOQ 15 kpcs/reel This document is subject to change without notice. Date Published: July 2016 CDS-0020-04 (Issue A) 1 CE3521M4 PIN CONFIGURATION AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name 1 Source 2 Drain 3 Source 4 Gate ABSOLUTE MAXIMUM RATINGS (TA = +25C, unless otherwise specified) Parameter Symbol Rating Unit Drain to Source Voltage V 4.0 V DS Gate to Source Voltage V -3.0 V GS Drain Current I I mA D DSS Gate Current I 80 A G Total Power Dissipation P 125 mW tot C Channel Temperature T +150 ch Storage Temperature T -55 to +125 C stg Note C Operation Temperature T -55 to +125 op Note Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4 RECOMMENDED OPERATING RANGE (TA = +25C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage V +1 +2 +3 V DS Drain Current I 5 10 15 mA D This document is subject to change without notice. 2